Deposition of MSe (M = Cd, Zn) films by LP-MOCVD from novel single-source precursors M[(SePPh2)2N]2

Mohammad Afzaal, Stephen M. Aucott, David Crouch, Paul O'Brien*, J. Derek Woollins, Jin Ho Park

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

The deposition of MSe (M= Cd, Zn) films by low pressure chemical vapor deposition from air stable single-source precursors, was analyzed. The thermogravimetric analysis of cadmium and zinc showed that the precursors were volatile and began to evaporate at 375°C. It was found using gas chromatography and mass spectrometry experiments that the use of methyl(n-hexyl) derivatives instead of symmetric alkyl hindered the formation of diethyldiselenide. The observed color of Zinc selenide films produced at 525°C was dark orange and the film was transparent.

Original languageEnglish
Pages (from-to)187-189
Number of pages3
JournalChemical Vapor Deposition
Volume8
Issue number5
DOIs
Publication statusPublished - 1 Sept 2002

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