Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy

R. Roedel; A. Bauer; S. Kremling; S. Reitzenstein; Sven Höfling; M. Kamp; L. Worschech; A. Forchel

doi:10.1088/0957-4484/23/1/015605

Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy

R. Roedel^*, A. Bauer, S. Kremling, S. Reitzenstein, Sven Höfling, M. Kamp, L. Worschech, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We demonstrate a method to controllably reduce the density of self-assembled InP quantum dots (QDs) by cyclic deposition with growth interruptions. Varying the number of cycles enabled a reduction of the QD density from 7.4 x 10(10) cm(-2) to 1.8 x 10(9) cm(-2) for the same total amount of deposited InP. Simultaneously, a systematic increase of the QD size could be observed. Emission characteristics of different-sized InP QDs were analyzed. Excitation power dependent and time-resolved measurements confirm a transition from type I to type II band alignment for large InP quantum dots. Photon autocorrelation measurements of type I QDs performed under pulsed excitation reveal pronounced antibunching (g((2))(tau = 0) = 0.06 +/- 0.03) as expected for a single-photon emitter. The described

Original language	English
Article number	015605
Number of pages	5
Journal	Nanotechnology
Volume	23
Issue number	1
DOIs	https://doi.org/10.1088/0957-4484/23/1/015605
Publication status	Published - 13 Jan 2012

Keywords

PHOTOLUMINESCENCE
EMISSION
RECOMBINATION
SURFACES
PHOTONS
INGAAS

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10.1088/0957-4484/23/1/015605

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title = "Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy",

abstract = "We demonstrate a method to controllably reduce the density of self-assembled InP quantum dots (QDs) by cyclic deposition with growth interruptions. Varying the number of cycles enabled a reduction of the QD density from 7.4 x 10(10) cm(-2) to 1.8 x 10(9) cm(-2) for the same total amount of deposited InP. Simultaneously, a systematic increase of the QD size could be observed. Emission characteristics of different-sized InP QDs were analyzed. Excitation power dependent and time-resolved measurements confirm a transition from type I to type II band alignment for large InP quantum dots. Photon autocorrelation measurements of type I QDs performed under pulsed excitation reveal pronounced antibunching (g((2))(tau = 0) = 0.06 +/- 0.03) as expected for a single-photon emitter. The described",

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author = "R. Roedel and A. Bauer and S. Kremling and S. Reitzenstein and Sven H{\"o}fling and M. Kamp and L. Worschech and A. Forchel",

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doi = "10.1088/0957-4484/23/1/015605",

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T1 - Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy

AU - Roedel, R.

AU - Bauer, A.

AU - Kremling, S.

AU - Reitzenstein, S.

AU - Höfling, Sven

AU - Kamp, M.

AU - Worschech, L.

AU - Forchel, A.

PY - 2012/1/13

Y1 - 2012/1/13

N2 - We demonstrate a method to controllably reduce the density of self-assembled InP quantum dots (QDs) by cyclic deposition with growth interruptions. Varying the number of cycles enabled a reduction of the QD density from 7.4 x 10(10) cm(-2) to 1.8 x 10(9) cm(-2) for the same total amount of deposited InP. Simultaneously, a systematic increase of the QD size could be observed. Emission characteristics of different-sized InP QDs were analyzed. Excitation power dependent and time-resolved measurements confirm a transition from type I to type II band alignment for large InP quantum dots. Photon autocorrelation measurements of type I QDs performed under pulsed excitation reveal pronounced antibunching (g((2))(tau = 0) = 0.06 +/- 0.03) as expected for a single-photon emitter. The described

AB - We demonstrate a method to controllably reduce the density of self-assembled InP quantum dots (QDs) by cyclic deposition with growth interruptions. Varying the number of cycles enabled a reduction of the QD density from 7.4 x 10(10) cm(-2) to 1.8 x 10(9) cm(-2) for the same total amount of deposited InP. Simultaneously, a systematic increase of the QD size could be observed. Emission characteristics of different-sized InP QDs were analyzed. Excitation power dependent and time-resolved measurements confirm a transition from type I to type II band alignment for large InP quantum dots. Photon autocorrelation measurements of type I QDs performed under pulsed excitation reveal pronounced antibunching (g((2))(tau = 0) = 0.06 +/- 0.03) as expected for a single-photon emitter. The described

KW - PHOTOLUMINESCENCE

KW - EMISSION

KW - RECOMBINATION

KW - SURFACES

KW - PHOTONS

KW - INGAAS

U2 - 10.1088/0957-4484/23/1/015605

DO - 10.1088/0957-4484/23/1/015605

M3 - Article

SN - 0957-4484

VL - 23

JO - Nanotechnology

JF - Nanotechnology

IS - 1

M1 - 015605

ER -

Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy

Abstract

Keywords

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