Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy

R. Roedel*, A. Bauer, S. Kremling, S. Reitzenstein, Sven Höfling, M. Kamp, L. Worschech, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We demonstrate a method to controllably reduce the density of self-assembled InP quantum dots (QDs) by cyclic deposition with growth interruptions. Varying the number of cycles enabled a reduction of the QD density from 7.4 x 10(10) cm(-2) to 1.8 x 10(9) cm(-2) for the same total amount of deposited InP. Simultaneously, a systematic increase of the QD size could be observed. Emission characteristics of different-sized InP QDs were analyzed. Excitation power dependent and time-resolved measurements confirm a transition from type I to type II band alignment for large InP quantum dots. Photon autocorrelation measurements of type I QDs performed under pulsed excitation reveal pronounced antibunching (g((2))(tau = 0) = 0.06 +/- 0.03) as expected for a single-photon emitter. The described

Original languageEnglish
Article number015605
Number of pages5
JournalNanotechnology
Volume23
Issue number1
DOIs
Publication statusPublished - 13 Jan 2012

Keywords

  • PHOTOLUMINESCENCE
  • EMISSION
  • RECOMBINATION
  • SURFACES
  • PHOTONS
  • INGAAS

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