Defect properties of ZnO and ZnO:P microwires

Christof P. Dietrich; Matthias Brandt; Martin Lange; Johannes Kupper; Tammo Boentgen; Holger von Wenckstern; Marius Grundmann

doi:10.1063/1.3530610

Defect properties of ZnO and ZnO:P microwires

Christof P. Dietrich^*, Matthias Brandt, Martin Lange, Johannes Kupper, Tammo Boentgen, Holger von Wenckstern, Marius Grundmann

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the defect properties of nominally undoped and phosphorus-doped ZnO microwires grown by carbothermal vapor phase transport. Cathodoluminescence measurements show very narrow (approximate to 300 mu eV), donorlike transitions in the UV spectral range. A recombination-line at 3.356 eV, previously assigned to phosphorus acceptors, is observed in our undoped ZnO. Thus the correlation of this recombination process and possible acceptor doping can be excluded. Hall effect measurements confirmed these findings and revealed n-type conductivity in both ZnO and high quality ZnO:P microwires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3530610]

Original language	English
Article number	013712
Number of pages	5
Journal	Journal of Applied Physics
Volume	109
Issue number	1
DOIs	https://doi.org/10.1063/1.3530610
Publication status	Published - 1 Jan 2011

Keywords

P-TYPE ZNO
THIN-FILMS
SEMICONDUCTOR NANOWIRES
ZINC-OXIDE
GROWTH
DEVICES

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10.1063/1.3530610

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title = "Defect properties of ZnO and ZnO:P microwires",

abstract = "We report on the defect properties of nominally undoped and phosphorus-doped ZnO microwires grown by carbothermal vapor phase transport. Cathodoluminescence measurements show very narrow (approximate to 300 mu eV), donorlike transitions in the UV spectral range. A recombination-line at 3.356 eV, previously assigned to phosphorus acceptors, is observed in our undoped ZnO. Thus the correlation of this recombination process and possible acceptor doping can be excluded. Hall effect measurements confirmed these findings and revealed n-type conductivity in both ZnO and high quality ZnO:P microwires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3530610]",

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T1 - Defect properties of ZnO and ZnO:P microwires

AU - Dietrich, Christof P.

AU - Brandt, Matthias

AU - Lange, Martin

AU - Kupper, Johannes

AU - Boentgen, Tammo

AU - von Wenckstern, Holger

AU - Grundmann, Marius

PY - 2011/1/1

Y1 - 2011/1/1

N2 - We report on the defect properties of nominally undoped and phosphorus-doped ZnO microwires grown by carbothermal vapor phase transport. Cathodoluminescence measurements show very narrow (approximate to 300 mu eV), donorlike transitions in the UV spectral range. A recombination-line at 3.356 eV, previously assigned to phosphorus acceptors, is observed in our undoped ZnO. Thus the correlation of this recombination process and possible acceptor doping can be excluded. Hall effect measurements confirmed these findings and revealed n-type conductivity in both ZnO and high quality ZnO:P microwires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3530610]

AB - We report on the defect properties of nominally undoped and phosphorus-doped ZnO microwires grown by carbothermal vapor phase transport. Cathodoluminescence measurements show very narrow (approximate to 300 mu eV), donorlike transitions in the UV spectral range. A recombination-line at 3.356 eV, previously assigned to phosphorus acceptors, is observed in our undoped ZnO. Thus the correlation of this recombination process and possible acceptor doping can be excluded. Hall effect measurements confirmed these findings and revealed n-type conductivity in both ZnO and high quality ZnO:P microwires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3530610]

KW - P-TYPE ZNO

KW - THIN-FILMS

KW - SEMICONDUCTOR NANOWIRES

KW - ZINC-OXIDE

KW - GROWTH

KW - DEVICES

U2 - 10.1063/1.3530610

DO - 10.1063/1.3530610

M3 - Article

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 013712

ER -

Defect properties of ZnO and ZnO:P microwires

Abstract

Keywords

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