Controlling the gain contribution of background emitters in few-quantum-dot microlasers

F Gericke, M Segnon, M.M. von Helversen, M Hopfmann, T Heindel, C Schneider, Sven Höfling, M Kamp, A Musiał, X Porte, C Gies, S Reitzenstein

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Abstract

We provide experimental and theoretical insight into single-emitter lasing effects in a quantum dot (QD)-microlaser under controlled variation of background gain provided by off-resonant discrete gain centers. For that purpose, we apply an advanced two-color excitation concept where the background gain contribution of off-resonant QDs can be continuously tuned by precisely balancing the relative excitation power of two lasers emitting at different wavelengths. In this way, by selectively exciting a singleresonant QD and off-resonant QDs, we identify distinct single-QD signatures in the lasing characteristics and distinguish between gain contributions of a single resonant emitter and a countable number of offresonant background emitters to the optical output of the microlaser. Our work addresses the importantquestion whether single-QD lasing is feasible in experimentally accessible systems and shows that, for the investigated microlaser, the single-QD gain needs to be supported by the background gain contribution ofoff-resonant QDs to reach the transition to lasing. Interestingly, while a single QD cannot drive the investigated micropillar into lasing, its relative contribution to the emission can be as high as 70% and it dominates the statistics of emitted photons in the intermediate excitation regime below threshold.
Original languageEnglish
Article number023036
Number of pages14
JournalNew Journal of Physics
Volume20
Early online date15 Feb 2018
DOIs
Publication statusPublished - Feb 2018

Keywords

  • Nanolasers
  • Cavity QED high-beta lasing
  • Quantum dot micropillar cavities
  • Single quantum dots laser
  • Semiconductor laser

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