Abstract
We demonstrate controlled STM-induced modification/destruction of Ih-C60 supported on a Cu(111) surface, showing that the molecule is more resilient to high currents for bias voltages greater than ca. 3.5 V. This is due to the enhanced charge transport through the diffuse SAMO orbitals of the molecule with lower probability for electron-vibration coupling than found for resonant low bias transport through π-molecular orbitals. Experimental and theoretical DFT results demonstrate the destruction mechanism comes from C2 emission from the fullerene cage and the formation of smaller fullerenes via sequential emission of C2.
Original language | English |
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Article number | 120251 |
Number of pages | 9 |
Journal | Carbon |
Volume | 238 |
Early online date | 27 Mar 2025 |
DOIs | |
Publication status | E-pub ahead of print - 27 Mar 2025 |
Keywords
- STM
- Fullerene destruction
- SAMO
- Electron transport
- Sequential fragmentation
- Stone-Wales
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Controlled High-Current-Induced STM Modification of C60 (dataset)
Scougall, E. (Creator), Anezo, B. (Creator), Tanuma, Y. (Creator), Chandler, H. J. (Creator), Ewels, C. (Creator), Schaub, R. (Creator) & Campbell, E. E. B. (Creator), University of St Andrews, 28 Mar 2025
DOI: 10.17630/cc18c6a4-f269-43e6-96c8-c4b5940cd8ab
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