Controlled high-current-induced scanning tunnelling microscope modification of C60

Ewan S. Scougall, Bastien Anézo, Yuri Tanuma, Henry J. Chandler, Chris Ewels, Renald Schaub*, Eleanor E.B. Campbell*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate controlled STM-induced modification/destruction of Ih-C60 supported on a Cu(111) surface, showing that the molecule is more resilient to high currents for bias voltages greater than ca. 3.5 V. This is due to the enhanced charge transport through the diffuse SAMO orbitals of the molecule with lower probability for electron-vibration coupling than found for resonant low bias transport through π-molecular orbitals. Experimental and theoretical DFT results demonstrate the destruction mechanism comes from C2 emission from the fullerene cage and the formation of smaller fullerenes via sequential emission of C2.
Original languageEnglish
Article number120251
Number of pages9
JournalCarbon
Volume238
Early online date27 Mar 2025
DOIs
Publication statusE-pub ahead of print - 27 Mar 2025

Keywords

  • STM
  • Fullerene destruction
  • SAMO
  • Electron transport
  • Sequential fragmentation
  • Stone-Wales

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