Control of the nonlinear carrier response time of AlGaAs photonic crystal waveguides by sample design

P  Murzyn; A Z  Garcia-Deniz; D O  Kundys; A M  Fox; J P R  Wells; D M  Whittaker; M S  Skolnick; T F  Krauss; J S  Roberts

doi:10.1063/1.2191955

Control of the nonlinear carrier response time of AlGaAs photonic crystal waveguides by sample design

P Murzyn, A Z Garcia-Deniz, D O Kundys, A M Fox, J P R Wells, D M Whittaker, M S Skolnick, T F Krauss, J S Roberts

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We have used reflection geometry pump-probe spectroscopy to investigate the free carrier response time of AlGaAs high refractive index contrast one-dimensional photonic crystal waveguides. We have observed pump-induced shifts of photonic resonances in the near infrared spectral region, and have studied the dependence of the decay time on the sample parameters. We find that the response time can be varied from 8 to 33 ps by changing the structure period and etch depth. This, combined with the large changes observed in the reflectivity, demonstrates excellent potential for application as ultrafast photonic switches with a controllable recovery time.

Original language	English
Number of pages	3
Journal	Applied Physics Letters
Volume	88
DOIs	https://doi.org/10.1063/1.2191955
Publication status	Published - 3 Apr 2006

Keywords

REFLECTIVITY
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@article{096a2a4385b2450fbb95ceb29ac94df8,

title = "Control of the nonlinear carrier response time of AlGaAs photonic crystal waveguides by sample design",

abstract = "We have used reflection geometry pump-probe spectroscopy to investigate the free carrier response time of AlGaAs high refractive index contrast one-dimensional photonic crystal waveguides. We have observed pump-induced shifts of photonic resonances in the near infrared spectral region, and have studied the dependence of the decay time on the sample parameters. We find that the response time can be varied from 8 to 33 ps by changing the structure period and etch depth. This, combined with the large changes observed in the reflectivity, demonstrates excellent potential for application as ultrafast photonic switches with a controllable recovery time.",

keywords = "REFLECTIVITY, INDEX",

author = "P Murzyn and Garcia-Deniz, {A Z} and Kundys, {D O} and Fox, {A M} and Wells, {J P R} and Whittaker, {D M} and Skolnick, {M S} and Krauss, {T F} and Roberts, {J S}",

year = "2006",

month = apr,

day = "3",

doi = "10.1063/1.2191955",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Control of the nonlinear carrier response time of AlGaAs photonic crystal waveguides by sample design

AU - Murzyn, P

AU - Garcia-Deniz, A Z

AU - Kundys, D O

AU - Fox, A M

AU - Wells, J P R

AU - Whittaker, D M

AU - Skolnick, M S

AU - Krauss, T F

AU - Roberts, J S

PY - 2006/4/3

Y1 - 2006/4/3

N2 - We have used reflection geometry pump-probe spectroscopy to investigate the free carrier response time of AlGaAs high refractive index contrast one-dimensional photonic crystal waveguides. We have observed pump-induced shifts of photonic resonances in the near infrared spectral region, and have studied the dependence of the decay time on the sample parameters. We find that the response time can be varied from 8 to 33 ps by changing the structure period and etch depth. This, combined with the large changes observed in the reflectivity, demonstrates excellent potential for application as ultrafast photonic switches with a controllable recovery time.

AB - We have used reflection geometry pump-probe spectroscopy to investigate the free carrier response time of AlGaAs high refractive index contrast one-dimensional photonic crystal waveguides. We have observed pump-induced shifts of photonic resonances in the near infrared spectral region, and have studied the dependence of the decay time on the sample parameters. We find that the response time can be varied from 8 to 33 ps by changing the structure period and etch depth. This, combined with the large changes observed in the reflectivity, demonstrates excellent potential for application as ultrafast photonic switches with a controllable recovery time.

KW - REFLECTIVITY

KW - INDEX

UR - http://www.scopus.com/inward/record.url?scp=33646706124&partnerID=8YFLogxK

U2 - 10.1063/1.2191955

DO - 10.1063/1.2191955

M3 - Article

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Control of the nonlinear carrier response time of AlGaAs photonic crystal waveguides by sample design

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