Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

Ben B. Y. Hsu; Chunhui Duan; Ebinazar B. Namdas; Andrea Gutacker; Jonathan D. Yuen; Fei Huang; Yong Cao; Guillermo C. Bazan; Ifor D. W. Samuel; Alan J. Heeger

doi:10.1002/adma.201103513

Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

Ben B. Y. Hsu
, Chunhui Duan
, Ebinazar B. Namdas
, Andrea Gutacker
, Jonathan D. Yuen
, Fei Huang
, Yong Cao
, Guillermo C. Bazan
, Ifor D. W. Samuel
, Alan J. Heeger

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1171-1175
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	9
DOIs	https://doi.org/10.1002/adma.201103513
Publication status	Published - 2 Mar 2012

Access to Document

10.1002/adma.201103513

Handle.net

Persistent link

Cite this

@article{d615b9ce4fcb483a9431ca4b2121e183,

title = "Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors",

author = "Hsu, \{Ben B. Y.\} and Chunhui Duan and Namdas, \{Ebinazar B.\} and Andrea Gutacker and Yuen, \{Jonathan D.\} and Fei Huang and Yong Cao and Bazan, \{Guillermo C.\} and Samuel, \{Ifor D. W.\} and Heeger, \{Alan J.\}",

year = "2012",

month = mar,

day = "2",

doi = "10.1002/adma.201103513",

language = "English",

volume = "24",

pages = "1171--1175",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "9",

}

TY - JOUR

T1 - Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

AU - Hsu, Ben B. Y.

AU - Duan, Chunhui

AU - Namdas, Ebinazar B.

AU - Gutacker, Andrea

AU - Yuen, Jonathan D.

AU - Huang, Fei

AU - Cao, Yong

AU - Bazan, Guillermo C.

AU - Samuel, Ifor D. W.

AU - Heeger, Alan J.

PY - 2012/3/2

Y1 - 2012/3/2

U2 - 10.1002/adma.201103513

DO - 10.1002/adma.201103513

M3 - Article

SN - 0935-9648

VL - 24

SP - 1171

EP - 1175

JO - Advanced Materials

JF - Advanced Materials

IS - 9

ER -