Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

Ben B. Y. Hsu; Chunhui Duan; Ebinazar B. Namdas; Andrea Gutacker; Jonathan D. Yuen; Fei Huang; Yong Cao; Guillermo C. Bazan; Ifor D. W. Samuel; Alan J. Heeger

doi:10.1002/adma.201103513

Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

Ben B. Y. Hsu, Chunhui Duan, Ebinazar B. Namdas, Andrea Gutacker, Jonathan D. Yuen, Fei Huang, Yong Cao, Guillermo C. Bazan, Ifor D. W. Samuel, Alan J. Heeger

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1171-1175
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	9
DOIs	https://doi.org/10.1002/adma.201103513
Publication status	Published - 2 Mar 2012

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10.1002/adma.201103513

Cite this

@article{d615b9ce4fcb483a9431ca4b2121e183,

title = "Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors",

author = "Hsu, {Ben B. Y.} and Chunhui Duan and Namdas, {Ebinazar B.} and Andrea Gutacker and Yuen, {Jonathan D.} and Fei Huang and Yong Cao and Bazan, {Guillermo C.} and Samuel, {Ifor D. W.} and Heeger, {Alan J.}",

year = "2012",

month = mar,

day = "2",

doi = "10.1002/adma.201103513",

language = "English",

volume = "24",

pages = "1171--1175",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

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TY - JOUR

T1 - Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

AU - Hsu, Ben B. Y.

AU - Duan, Chunhui

AU - Namdas, Ebinazar B.

AU - Gutacker, Andrea

AU - Yuen, Jonathan D.

AU - Huang, Fei

AU - Cao, Yong

AU - Bazan, Guillermo C.

AU - Samuel, Ifor D. W.

AU - Heeger, Alan J.

PY - 2012/3/2

Y1 - 2012/3/2

U2 - 10.1002/adma.201103513

DO - 10.1002/adma.201103513

M3 - Article

SN - 0935-9648

VL - 24

SP - 1171

EP - 1175

JO - Advanced Materials

JF - Advanced Materials

IS - 9

ER -