Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek; R. Leyman; D. Carnegie; N. Bazieva; G. Erbert; S. Schulz; C. Reardon; E. U. Rafailov

doi:10.1063/1.4747724

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek^*, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, E. U. Rafailov

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency similar to 1 THz.

Original language	English
Article number	081114
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.4747724
Publication status	Published - 20 Aug 2012

Keywords

Continuous wave radiation
Terahertz (THz) frequencies
Heterodyne source
Quantum-dot (QD) semiconductor
Photomixer device

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10.1063/1.4747724

APL2012
© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 101, Issue 8 and may be found at http://apl.aip.org/resource/1/applab/v101/i8/p081114_s1
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Cite this

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title = "Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device",

abstract = "Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency similar to 1 THz.",

keywords = "Continuous wave radiation , Terahertz (THz) frequencies , Heterodyne source , Quantum-dot (QD) semiconductor , Photomixer device",

author = "T. Kruczek and R. Leyman and D. Carnegie and N. Bazieva and G. Erbert and S. Schulz and C. Reardon and Rafailov, {E. U.}",

note = "This project was funded by EPSRC under Grant EP/H015795/1. ",

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T1 - Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

AU - Kruczek, T.

AU - Leyman, R.

AU - Carnegie, D.

AU - Bazieva, N.

AU - Erbert, G.

AU - Schulz, S.

AU - Reardon, C.

AU - Rafailov, E. U.

N1 - This project was funded by EPSRC under Grant EP/H015795/1.

PY - 2012/8/20

Y1 - 2012/8/20

N2 - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency similar to 1 THz.

AB - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency similar to 1 THz.

KW - Continuous wave radiation

KW - Terahertz (THz) frequencies

KW - Heterodyne source

KW - Quantum-dot (QD) semiconductor

KW - Photomixer device

U2 - 10.1063/1.4747724

DO - 10.1063/1.4747724

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081114

ER -

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

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Keywords

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