Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

R. Kudrawiec*, G. Sek, M. Motyka, J. Misiewicz, A. Somers, Sven Höfling, L. Worschech, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well (QW) and a layer of InAs quantum dashes (QDashes) separated by In0.53Ga0.23Al0.24As barriers of various thicknesses have been investigated by contactless electroreflectance. The observed spectral features have been explained taking into account the optical transitions in a combined system of In0.53Ga0.47As QW and InAs QDash wetting layer. It has been shown that there exist electron and hole states which are localized on both sides of such an asymmetric confinement potential. The latter has allowed concluding that the QDash region in tunnel-injection structures can be easily penetrated by the carriers due to the presence of the wetting layer in the self-assembled structure. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483948]

Original languageEnglish
Article number086106
Number of pages3
JournalJournal of Applied Physics
Volume108
Issue number8
DOIs
Publication statusPublished - 15 Oct 2010

Keywords

  • DIODE-LASER OPERATION
  • ROOM-TEMPERATURE
  • PHONON BOTTLENECK
  • DOT LASERS

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