Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

R. Kudrawiec; G. Sek; M. Motyka; J. Misiewicz; A. Somers; Sven Höfling; L. Worschech; A. Forchel

doi:10.1063/1.3483948

Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

R. Kudrawiec^*, G. Sek, M. Motyka, J. Misiewicz, A. Somers, Sven Höfling, L. Worschech, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well (QW) and a layer of InAs quantum dashes (QDashes) separated by In0.53Ga0.23Al0.24As barriers of various thicknesses have been investigated by contactless electroreflectance. The observed spectral features have been explained taking into account the optical transitions in a combined system of In0.53Ga0.47As QW and InAs QDash wetting layer. It has been shown that there exist electron and hole states which are localized on both sides of such an asymmetric confinement potential. The latter has allowed concluding that the QDash region in tunnel-injection structures can be easily penetrated by the carriers due to the presence of the wetting layer in the self-assembled structure. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483948]

Original language	English
Article number	086106
Number of pages	3
Journal	Journal of Applied Physics
Volume	108
Issue number	8
DOIs	https://doi.org/10.1063/1.3483948
Publication status	Published - 15 Oct 2010

Keywords

DIODE-LASER OPERATION
ROOM-TEMPERATURE
PHONON BOTTLENECK
DOT LASERS

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10.1063/1.3483948

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Kudrawiec, R., Sek, G., Motyka, M., Misiewicz, J., Somers, A., Höfling, S., Worschech, L., & Forchel, A. (2010). Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes. Journal of Applied Physics, 108(8), Article 086106. https://doi.org/10.1063/1.3483948

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title = "Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes",

abstract = "Tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well (QW) and a layer of InAs quantum dashes (QDashes) separated by In0.53Ga0.23Al0.24As barriers of various thicknesses have been investigated by contactless electroreflectance. The observed spectral features have been explained taking into account the optical transitions in a combined system of In0.53Ga0.47As QW and InAs QDash wetting layer. It has been shown that there exist electron and hole states which are localized on both sides of such an asymmetric confinement potential. The latter has allowed concluding that the QDash region in tunnel-injection structures can be easily penetrated by the carriers due to the presence of the wetting layer in the self-assembled structure. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483948]",

keywords = "DIODE-LASER OPERATION, ROOM-TEMPERATURE, PHONON BOTTLENECK, DOT LASERS",

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doi = "10.1063/1.3483948",

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T1 - Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

AU - Kudrawiec, R.

AU - Sek, G.

AU - Motyka, M.

AU - Misiewicz, J.

AU - Somers, A.

AU - Höfling, Sven

AU - Worschech, L.

AU - Forchel, A.

PY - 2010/10/15

Y1 - 2010/10/15

N2 - Tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well (QW) and a layer of InAs quantum dashes (QDashes) separated by In0.53Ga0.23Al0.24As barriers of various thicknesses have been investigated by contactless electroreflectance. The observed spectral features have been explained taking into account the optical transitions in a combined system of In0.53Ga0.47As QW and InAs QDash wetting layer. It has been shown that there exist electron and hole states which are localized on both sides of such an asymmetric confinement potential. The latter has allowed concluding that the QDash region in tunnel-injection structures can be easily penetrated by the carriers due to the presence of the wetting layer in the self-assembled structure. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483948]

AB - Tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well (QW) and a layer of InAs quantum dashes (QDashes) separated by In0.53Ga0.23Al0.24As barriers of various thicknesses have been investigated by contactless electroreflectance. The observed spectral features have been explained taking into account the optical transitions in a combined system of In0.53Ga0.47As QW and InAs QDash wetting layer. It has been shown that there exist electron and hole states which are localized on both sides of such an asymmetric confinement potential. The latter has allowed concluding that the QDash region in tunnel-injection structures can be easily penetrated by the carriers due to the presence of the wetting layer in the self-assembled structure. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483948]

KW - DIODE-LASER OPERATION

KW - ROOM-TEMPERATURE

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ER -

Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

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Keywords

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