Constant-phase-element (CPE) modeling of ferroelectric random-access memory lead zirconate-titanate (PZT) capacitors

Finlay D. Morrison, Dong Jin Jung, James F. Scott

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)

Abstract

Several commercial high density ferroelectric random access memory (FeRAM) devices utilize stacks of submicron lead zirconate-titanate (PZT) capacitors. The low-field electrical characteristics of these capacitors display a specific frequency dependence which is best represented by a constant phase element (CPE) in the equivalent circuit diagram. The microscopic origin of such CPEs in the general literature is still of some debate, often being attributed to fractal dimensionality of the capacitor, near-electrode gradients in the dielectric, fringing fields near the electrode perimeter or, more generally, a distribution of relaxation times. We discuss these possibilities.(c) 2007 American Institute of Physics.

Original languageEnglish
Pages (from-to)094112
Number of pages5
JournalJournal of Applied Physics
Volume101
Issue number9
DOIs
Publication statusPublished - 15 May 2007

Keywords

  • POLARIZATION REVERSAL PROCESS
  • (BA,SR)TIO3 THIN-FILMS
  • DIELECTRIC-RELAXATION
  • ELECTRODE
  • PERMITTIVITY
  • CONSEQUENCE
  • DISPERSION
  • DYNAMICS
  • INCREASE
  • BEHAVIOR

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