Abstract
The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. Here, we demonstrate the possibility of conformally coating carbon nanotubes with high-dielectric oxide as a first step toward ultrahigh integration density of three-dimensional ferroelectric random access memories. (C) 2008 American Institute of Physics.
| Original language | English |
|---|---|
| Article number | 053109 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 4 Feb 2008 |
Keywords
- THIN-FILMS
- ARRAYS
- FABRICATION
- TEMPLATES