Conduction at domain walls in oxide multiferroics

J. Seidel*, L. W. Martin, Q. He, Q. Zhan, Y. -H. Chu, A. Rother, M. E. Hawkridge, P. Maksymovych, P. Yu, M. Gajek, N. Balke, S. V. Kalinin, S. Gemming, F. Wang, G. Catalan, J. F. Scott, N. A. Spaldin, J. Orenstein, R. Ramesh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

963 Citations (Scopus)

Abstract

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3). The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Original languageEnglish
Pages (from-to)229-234
Number of pages6
JournalNature Materials
Volume8
Issue number3
DOIs
Publication statusPublished - Mar 2009

Keywords

  • THIN-FILMS
  • FERROELECTRIC-FILMS
  • RECONSTRUCTION
  • BIFEO3
  • POLARIZATION
  • TRANSITIONS
  • RESOLUTION

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