Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

C. P. Dietrich; M. Lange; G. Benndorf; J. Lenzner; M. Lorenz; M. Grundmann

doi:10.1088/1367-2630/12/3/033030

Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

C. P. Dietrich^*, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, M. Grundmann

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We demonstrate that excitons in semiconductor alloys are subject to competing localization effects due to disorder (random potential fluctuations) and shallow point defects (impurities). The relative importance of these effects varies with alloy chemical composition, impurity activation energy as well as temperature. We evaluate this effect quantitatively for Mg(x)Zn(1-x)O : Al (0

Original language	English
Article number	033030
Number of pages	10
Journal	New Journal of Physics
Volume	12
DOIs	https://doi.org/10.1088/1367-2630/12/3/033030
Publication status	Published - 16 Mar 2010

Keywords

PULSED-LASER DEPOSITION
OPTICAL-PROPERTIES
EPITAXIAL-FILMS
SOLID-SOLUTIONS
MIXED-CRYSTALS
THIN-FILMS
PHOTOLUMINESCENCE
GAN
SPECTRA
GAAS

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10.1088/1367-2630/12/3/033030

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@article{1f03961694a34a7b83f0583517dfe3ac,

title = "Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys",

abstract = "We demonstrate that excitons in semiconductor alloys are subject to competing localization effects due to disorder (random potential fluctuations) and shallow point defects (impurities). The relative importance of these effects varies with alloy chemical composition, impurity activation energy as well as temperature. We evaluate this effect quantitatively for Mg(x)Zn(1-x)O : Al (0 ",

keywords = "PULSED-LASER DEPOSITION, OPTICAL-PROPERTIES, EPITAXIAL-FILMS, SOLID-SOLUTIONS, MIXED-CRYSTALS, THIN-FILMS, PHOTOLUMINESCENCE, GAN, SPECTRA, GAAS",

author = "Dietrich, {C. P.} and M. Lange and G. Benndorf and J. Lenzner and M. Lorenz and M. Grundmann",

year = "2010",

month = mar,

day = "16",

doi = "10.1088/1367-2630/12/3/033030",

language = "English",

volume = "12",

journal = "New Journal of Physics",

issn = "1367-2630",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

AU - Dietrich, C. P.

AU - Lange, M.

AU - Benndorf, G.

AU - Lenzner, J.

AU - Lorenz, M.

AU - Grundmann, M.

PY - 2010/3/16

Y1 - 2010/3/16

N2 - We demonstrate that excitons in semiconductor alloys are subject to competing localization effects due to disorder (random potential fluctuations) and shallow point defects (impurities). The relative importance of these effects varies with alloy chemical composition, impurity activation energy as well as temperature. We evaluate this effect quantitatively for Mg(x)Zn(1-x)O : Al (0

AB - We demonstrate that excitons in semiconductor alloys are subject to competing localization effects due to disorder (random potential fluctuations) and shallow point defects (impurities). The relative importance of these effects varies with alloy chemical composition, impurity activation energy as well as temperature. We evaluate this effect quantitatively for Mg(x)Zn(1-x)O : Al (0

KW - PULSED-LASER DEPOSITION

KW - OPTICAL-PROPERTIES

KW - EPITAXIAL-FILMS

KW - SOLID-SOLUTIONS

KW - MIXED-CRYSTALS

KW - THIN-FILMS

KW - PHOTOLUMINESCENCE

KW - GAN

KW - SPECTRA

KW - GAAS

U2 - 10.1088/1367-2630/12/3/033030

DO - 10.1088/1367-2630/12/3/033030

M3 - Article

SN - 1367-2630

VL - 12

JO - New Journal of Physics

JF - New Journal of Physics

M1 - 033030

ER -

Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

Abstract

Keywords

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