Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

C. P. Dietrich*, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, M. Grundmann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We demonstrate that excitons in semiconductor alloys are subject to competing localization effects due to disorder (random potential fluctuations) and shallow point defects (impurities). The relative importance of these effects varies with alloy chemical composition, impurity activation energy as well as temperature. We evaluate this effect quantitatively for Mg(x)Zn(1-x)O : Al (0

Original languageEnglish
Article number033030
Number of pages10
JournalNew Journal of Physics
Volume12
DOIs
Publication statusPublished - 16 Mar 2010

Keywords

  • PULSED-LASER DEPOSITION
  • OPTICAL-PROPERTIES
  • EPITAXIAL-FILMS
  • SOLID-SOLUTIONS
  • MIXED-CRYSTALS
  • THIN-FILMS
  • PHOTOLUMINESCENCE
  • GAN
  • SPECTRA
  • GAAS

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