Abstract
ZnO thin films were deposited on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition. High-quality ZnO thin films were fabricated on both substrates successfully. Interdigital transducer-shaped Al electrodes were used for measuring electrical properties. Electrical current as a function of voltage, temperature-dependent I-V, and impedance of ZnO thin films were measured. ZnO thin films on MgO substrate show ohmic behavior. On the other hand, ZnO thin films on SiO2/Si(100) substrate show good thermal stability but Schottky-like diode behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 9-14 |
| Number of pages | 6 |
| Journal | Integrated Ferroelectrics |
| Volume | 133 |
| DOIs | |
| Publication status | Published - 2012 |
Keywords
- ZnO thin films
- pulsed laser deposition
- SiO2/Si(100) substrates
- single crystal MgO
- MBE GROWTH
- DOPED ZNO
- TEMPERATURE
- TRANSISTOR
Fingerprint
Dive into the research topics of 'Comparison of the Electrical Properties of ZnO Thin Films on Different Substrates by Pulsed Laser Deposition'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver