Comparison of the Electrical Properties of ZnO Thin Films on Different Substrates by Pulsed Laser Deposition

M. Echizen; S. Motoyama; T. Tatsuta; O. Tsuji; R. S. Katiyar; A. Kumar; J. F. Scott

doi:10.1080/10584587.2012.660862

Comparison of the Electrical Properties of ZnO Thin Films on Different Substrates by Pulsed Laser Deposition

M. Echizen, S. Motoyama, T. Tatsuta, O. Tsuji, R. S. Katiyar^*, A. Kumar, J. F. Scott

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

ZnO thin films were deposited on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition. High-quality ZnO thin films were fabricated on both substrates successfully. Interdigital transducer-shaped Al electrodes were used for measuring electrical properties. Electrical current as a function of voltage, temperature-dependent I-V, and impedance of ZnO thin films were measured. ZnO thin films on MgO substrate show ohmic behavior. On the other hand, ZnO thin films on SiO2/Si(100) substrate show good thermal stability but Schottky-like diode behavior.

Original language	English
Pages (from-to)	9-14
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	133
DOIs	https://doi.org/10.1080/10584587.2012.660862
Publication status	Published - 2012

Keywords

ZnO thin films
pulsed laser deposition
SiO2/Si(100) substrates
single crystal MgO
MBE GROWTH
DOPED ZNO
TEMPERATURE
TRANSISTOR

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10.1080/10584587.2012.660862

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@article{8285422e3447438ead471f2017618454,

title = "Comparison of the Electrical Properties of ZnO Thin Films on Different Substrates by Pulsed Laser Deposition",

abstract = "ZnO thin films were deposited on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition. High-quality ZnO thin films were fabricated on both substrates successfully. Interdigital transducer-shaped Al electrodes were used for measuring electrical properties. Electrical current as a function of voltage, temperature-dependent I-V, and impedance of ZnO thin films were measured. ZnO thin films on MgO substrate show ohmic behavior. On the other hand, ZnO thin films on SiO2/Si(100) substrate show good thermal stability but Schottky-like diode behavior.",

keywords = "ZnO thin films, pulsed laser deposition, SiO2/Si(100) substrates, single crystal MgO, MBE GROWTH, DOPED ZNO, TEMPERATURE, TRANSISTOR",

author = "M. Echizen and S. Motoyama and T. Tatsuta and O. Tsuji and Katiyar, {R. S.} and A. Kumar and Scott, {J. F.}",

year = "2012",

doi = "10.1080/10584587.2012.660862",

language = "English",

volume = "133",

pages = "9--14",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis",

}

TY - JOUR

T1 - Comparison of the Electrical Properties of ZnO Thin Films on Different Substrates by Pulsed Laser Deposition

AU - Echizen, M.

AU - Motoyama, S.

AU - Tatsuta, T.

AU - Tsuji, O.

AU - Katiyar, R. S.

AU - Kumar, A.

AU - Scott, J. F.

PY - 2012

Y1 - 2012

N2 - ZnO thin films were deposited on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition. High-quality ZnO thin films were fabricated on both substrates successfully. Interdigital transducer-shaped Al electrodes were used for measuring electrical properties. Electrical current as a function of voltage, temperature-dependent I-V, and impedance of ZnO thin films were measured. ZnO thin films on MgO substrate show ohmic behavior. On the other hand, ZnO thin films on SiO2/Si(100) substrate show good thermal stability but Schottky-like diode behavior.

AB - ZnO thin films were deposited on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition. High-quality ZnO thin films were fabricated on both substrates successfully. Interdigital transducer-shaped Al electrodes were used for measuring electrical properties. Electrical current as a function of voltage, temperature-dependent I-V, and impedance of ZnO thin films were measured. ZnO thin films on MgO substrate show ohmic behavior. On the other hand, ZnO thin films on SiO2/Si(100) substrate show good thermal stability but Schottky-like diode behavior.

KW - ZnO thin films

KW - pulsed laser deposition

KW - SiO2/Si(100) substrates

KW - single crystal MgO

KW - MBE GROWTH

KW - DOPED ZNO

KW - TEMPERATURE

KW - TRANSISTOR

U2 - 10.1080/10584587.2012.660862

DO - 10.1080/10584587.2012.660862

M3 - Article

SN - 1058-4587

VL - 133

SP - 9

EP - 14

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Comparison of the Electrical Properties of ZnO Thin Films on Different Substrates by Pulsed Laser Deposition

Abstract

Keywords

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