Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

F. Schmidt; S. Mueller; H. von Wenckstern; C. P. Dietrich; R. Heinhold; H-S. Kim; M. W. Allen; M. Grundmann

doi:10.1063/1.4817824

Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

F. Schmidt^*
, S. Mueller
, H. von Wenckstern
, C. P. Dietrich
, R. Heinhold
, H-S. Kim
, M. W. Allen
, M. Grundmann

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V-Zn is likely involved in this defect. (C) 2013 AIP Publishing LLC.

Original language	English
Article number	062102
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.4817824
Publication status	Published - 5 Aug 2013

Keywords

LEVEL TRANSIENT SPECTROSCOPY
ZINC-OXIDE
ELECTRICAL CHARACTERIZATION
SCHOTTKY CONTACTS
POINT-DEFECTS
DOPED ZNO
TRAP
VARISTORS
DONOR
MN

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title = "Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals",

abstract = "Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V-Zn is likely involved in this defect. (C) 2013 AIP Publishing LLC.",

keywords = "LEVEL TRANSIENT SPECTROSCOPY, ZINC-OXIDE, ELECTRICAL CHARACTERIZATION, SCHOTTKY CONTACTS, POINT-DEFECTS, DOPED ZNO, TRAP, VARISTORS, DONOR, MN",

author = "F. Schmidt and S. Mueller and \{von Wenckstern\}, H. and Dietrich, \{C. P.\} and R. Heinhold and H-S. Kim and Allen, \{M. W.\} and M. Grundmann",

year = "2013",

month = aug,

day = "5",

doi = "10.1063/1.4817824",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

AU - Schmidt, F.

AU - Mueller, S.

AU - von Wenckstern, H.

AU - Dietrich, C. P.

AU - Heinhold, R.

AU - Kim, H-S.

AU - Allen, M. W.

AU - Grundmann, M.

PY - 2013/8/5

Y1 - 2013/8/5

N2 - Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V-Zn is likely involved in this defect. (C) 2013 AIP Publishing LLC.

AB - Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V-Zn is likely involved in this defect. (C) 2013 AIP Publishing LLC.

KW - LEVEL TRANSIENT SPECTROSCOPY

KW - ZINC-OXIDE

KW - ELECTRICAL CHARACTERIZATION

KW - SCHOTTKY CONTACTS

KW - POINT-DEFECTS

KW - DOPED ZNO

KW - TRAP

KW - VARISTORS

KW - DONOR

KW - MN

U2 - 10.1063/1.4817824

DO - 10.1063/1.4817824

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062102

ER -

Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

Abstract

Keywords

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