Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

F. Schmidt*, S. Mueller, H. von Wenckstern, C. P. Dietrich, R. Heinhold, H-S. Kim, M. W. Allen, M. Grundmann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V-Zn is likely involved in this defect. (C) 2013 AIP Publishing LLC.

Original languageEnglish
Article number062102
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number6
DOIs
Publication statusPublished - 5 Aug 2013

Keywords

  • LEVEL TRANSIENT SPECTROSCOPY
  • ZINC-OXIDE
  • ELECTRICAL CHARACTERIZATION
  • SCHOTTKY CONTACTS
  • POINT-DEFECTS
  • DOPED ZNO
  • TRAP
  • VARISTORS
  • DONOR
  • MN

Fingerprint

Dive into the research topics of 'Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals'. Together they form a unique fingerprint.

Cite this