Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

A. A. Demenev; V. D. Kulakovskii; C. Schneider; S. Brodbeck; M. Kamp; S. Höfling; S. V. Lobanov; T. Weiss; N. A. Gippius; S. G. Tikhodeev

doi:10.1063/1.4966279

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

A. A. Demenev, V. D. Kulakovskii, C. Schneider, S. Brodbeck, M. Kamp, S. Höfling, S. V. Lobanov, T. Weiss, N. A. Gippius, S. G. Tikhodeev

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Abstract

We report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

Original language	English
Article number	171106
Number of pages	5
Journal	Applied Physics Letters
Volume	109
Issue number	17
DOIs	https://doi.org/10.1063/1.4966279
Publication status	Published - 24 Oct 2016

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Hoefling_2016_APL_ChiralModulated_AAM
© 2016, the Author(s). This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at aip.scitation.org / http://dx.doi.org/10.1063/1.4966279
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title = "Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells",

abstract = "We report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.",

author = "Demenev, {A. A.} and Kulakovskii, {V. D.} and C. Schneider and S. Brodbeck and M. Kamp and S. H{\"o}fling and Lobanov, {S. V.} and T. Weiss and Gippius, {N. A.} and Tikhodeev, {S. G.}",

note = "This work has been funded by Russian Scientific Foundation (Grant No. 14-12-01372) and State of Bavaria.",

year = "2016",

month = oct,

day = "24",

doi = "10.1063/1.4966279",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

AU - Demenev, A. A.

AU - Kulakovskii, V. D.

AU - Schneider, C.

AU - Brodbeck, S.

AU - Kamp, M.

AU - Höfling, S.

AU - Lobanov, S. V.

AU - Weiss, T.

AU - Gippius, N. A.

AU - Tikhodeev, S. G.

N1 - This work has been funded by Russian Scientific Foundation (Grant No. 14-12-01372) and State of Bavaria.

PY - 2016/10/24

Y1 - 2016/10/24

N2 - We report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

AB - We report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

U2 - 10.1063/1.4966279

DO - 10.1063/1.4966279

M3 - Article

AN - SCOPUS:84994276035

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171106

ER -

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

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