Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime

H. Plank; S. A. Tarasenko; T. Hummel; G. Knebl; P. Pfeffer; M. Kamp; S. Höfling; S. D. Ganichev

doi:10.1016/j.physe.2016.08.036

Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime

H. Plank, S. A. Tarasenko, T. Hummel, G. Knebl, P. Pfeffer, M. Kamp, S. Höfling, S. D. Ganichev

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.

Original language	English
Pages (from-to)	193-198
Journal	Physica E: Low-dimensional Systems and Nanostructures
Volume	85
Early online date	1 Sept 2016
DOIs	https://doi.org/10.1016/j.physe.2016.08.036
Publication status	Published - Jan 2017

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Hoefling_2016_PE_PhotogalvanicEffects_AM
© 2016, Elsevier. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at www.sciencedirect.com / https://dx.doi.org/10.1016/j.physe.2016.08.036
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title = "Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime",

abstract = "We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.",

author = "H. Plank and Tarasenko, {S. A.} and T. Hummel and G. Knebl and P. Pfeffer and M. Kamp and S. H{\"o}fling and Ganichev, {S. D.}",

note = "The work was supported by the Elite Network of Bavaria (K-NW-2013-247), the DFG priority program SPP1666, the Volkswagen Stiftung Program, the State of Bavaria and the German Research Foundation (Ka2318/4-1). S.A.T. acknowledges support from the RFBR (projects 14-22-02102 and 16-02-00375).",

year = "2017",

month = jan,

doi = "10.1016/j.physe.2016.08.036",

language = "English",

volume = "85",

pages = "193--198",

journal = "Physica E: Low-dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime

AU - Plank, H.

AU - Tarasenko, S. A.

AU - Hummel, T.

AU - Knebl, G.

AU - Pfeffer, P.

AU - Kamp, M.

AU - Höfling, S.

AU - Ganichev, S. D.

N1 - The work was supported by the Elite Network of Bavaria (K-NW-2013-247), the DFG priority program SPP1666, the Volkswagen Stiftung Program, the State of Bavaria and the German Research Foundation (Ka2318/4-1). S.A.T. acknowledges support from the RFBR (projects 14-22-02102 and 16-02-00375).

PY - 2017/1

Y1 - 2017/1

N2 - We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.

AB - We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.

U2 - 10.1016/j.physe.2016.08.036

DO - 10.1016/j.physe.2016.08.036

M3 - Article

SN - 1386-9477

VL - 85

SP - 193

EP - 198

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

ER -

Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime

Abstract

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