Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime

H. Plank, S. A. Tarasenko, T. Hummel, G. Knebl, P. Pfeffer, M. Kamp, S. Höfling, S. D. Ganichev

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)
1 Downloads (Pure)

Abstract

We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.
Original languageEnglish
Pages (from-to)193-198
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume85
Early online date1 Sept 2016
DOIs
Publication statusPublished - Jan 2017

Fingerprint

Dive into the research topics of 'Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime'. Together they form a unique fingerprint.

Cite this