Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots

J J  Finley; A D  Ashmore; A  Lemaitre; D J  Mowbray; M S  Skolnick; I E  Itskevich; P A  Maksym; M  Hopkinson; T F  Krauss

doi:10.1103/PhysRevB.63.073307

Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots

J J Finley, A D Ashmore, A Lemaitre, D J Mowbray, M S Skolnick, I E Itskevich, P A Maksym, M Hopkinson, T F Krauss

Research output: Contribution to journal › Article › peer-review

Abstract

Charged (X*) and neutral (X) exciton recombination is reported in the photoluminescence spectra of single In(Ga)As quantum dots. Photoluminescence excitation (PLE) spectra show that the charged excitons are created only for excitation in the barrier or cladding layers of the structure, consistent with their charged character, whereas the neutral excitons in addition show well-defined excitation features for resonant excitation of the dots. The PLE spectra for X and X* exhibit a clear anticorrelation in the region of the wetting layer transition, showing that they compete for photocreated carriers.

Original language	English
Article number	073307
Number of pages	4
Journal	Physical Review. B, Condensed matter and materials physics
Volume	63
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.63.073307
Publication status	Published - 15 Feb 2001

Keywords

ARTIFICIAL ATOMS
SPECTROSCOPY
STATES
GAAS

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10.1103/PhysRevB.63.073307

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abstract = "Charged (X*) and neutral (X) exciton recombination is reported in the photoluminescence spectra of single In(Ga)As quantum dots. Photoluminescence excitation (PLE) spectra show that the charged excitons are created only for excitation in the barrier or cladding layers of the structure, consistent with their charged character, whereas the neutral excitons in addition show well-defined excitation features for resonant excitation of the dots. The PLE spectra for X and X* exhibit a clear anticorrelation in the region of the wetting layer transition, showing that they compete for photocreated carriers.",

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AU - Finley, J J

AU - Ashmore, A D

AU - Lemaitre, A

AU - Mowbray, D J

AU - Skolnick, M S

AU - Itskevich, I E

AU - Maksym, P A

AU - Hopkinson, M

AU - Krauss, T F

PY - 2001/2/15

Y1 - 2001/2/15

N2 - Charged (X*) and neutral (X) exciton recombination is reported in the photoluminescence spectra of single In(Ga)As quantum dots. Photoluminescence excitation (PLE) spectra show that the charged excitons are created only for excitation in the barrier or cladding layers of the structure, consistent with their charged character, whereas the neutral excitons in addition show well-defined excitation features for resonant excitation of the dots. The PLE spectra for X and X* exhibit a clear anticorrelation in the region of the wetting layer transition, showing that they compete for photocreated carriers.

AB - Charged (X*) and neutral (X) exciton recombination is reported in the photoluminescence spectra of single In(Ga)As quantum dots. Photoluminescence excitation (PLE) spectra show that the charged excitons are created only for excitation in the barrier or cladding layers of the structure, consistent with their charged character, whereas the neutral excitons in addition show well-defined excitation features for resonant excitation of the dots. The PLE spectra for X and X* exhibit a clear anticorrelation in the region of the wetting layer transition, showing that they compete for photocreated carriers.

KW - ARTIFICIAL ATOMS

KW - SPECTROSCOPY

KW - STATES

KW - GAAS

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DO - 10.1103/PhysRevB.63.073307

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JO - Physical Review. B, Condensed matter and materials physics

JF - Physical Review. B, Condensed matter and materials physics

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ER -

Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots

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Keywords

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