Characterization and development of materials for an integrated high-temperature sensor using resistive test structures

A. Tabasnikov; A. S. Bunting; J. G. Terry; J. Murray; G. Cummins; C. Zhao; J. Zhou; R. Y. Fu; M. P.Y. Desmulliez; A. J. Walton; S. Smith

doi:10.1109/ICMTS.2014.6841491

Characterization and development of materials for an integrated high-temperature sensor using resistive test structures

A. Tabasnikov, A. S. Bunting, J. G. Terry, J. Murray, G. Cummins, C. Zhao, J. Zhou, R. Y. Fu, M. P.Y. Desmulliez, A. J. Walton, S. Smith

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of-150 ppm/°C which remains stable after 6 hours of annealing at 600°C.

Original language	English
Title of host publication	2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	188-193
Number of pages	6
ISBN (Print)	9781479921928
DOIs	https://doi.org/10.1109/ICMTS.2014.6841491
Publication status	Published - 1 Jan 2014
Event	27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy Duration: 24 Mar 2014 → 27 Mar 2014

Conference

Conference	27th International Conference on Microelectronic Test Structures, ICMTS 2014
Country/Territory	Italy
City	Udine
Period	24/03/14 → 27/03/14

Keywords

High temperature
Sensors
Sheet resistance
Tantalum nitride
Temperature dependence
Test structures

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10.1109/ICMTS.2014.6841491

Cite this

Tabasnikov, A., Bunting, A. S., Terry, J. G., Murray, J., Cummins, G., Zhao, C., Zhou, J., Fu, R. Y., Desmulliez, M. P. Y., Walton, A. J., & Smith, S. (2014). Characterization and development of materials for an integrated high-temperature sensor using resistive test structures. In 2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings (pp. 188-193). Article 6841491 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2014.6841491

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title = "Characterization and development of materials for an integrated high-temperature sensor using resistive test structures",

abstract = "This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of-150 ppm/°C which remains stable after 6 hours of annealing at 600°C.",

keywords = "High temperature, Sensors, Sheet resistance, Tantalum nitride, Temperature dependence, Test structures",

author = "A. Tabasnikov and Bunting, {A. S.} and Terry, {J. G.} and J. Murray and G. Cummins and C. Zhao and J. Zhou and Fu, {R. Y.} and Desmulliez, {M. P.Y.} and Walton, {A. J.} and S. Smith",

year = "2014",

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doi = "10.1109/ICMTS.2014.6841491",

language = "English",

isbn = "9781479921928",

pages = "188--193",

booktitle = "2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "27th International Conference on Microelectronic Test Structures, ICMTS 2014 ; Conference date: 24-03-2014 Through 27-03-2014",

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Tabasnikov, A, Bunting, AS, Terry, JG, Murray, J, Cummins, G, Zhao, C, Zhou, J, Fu, RY, Desmulliez, MPY, Walton, AJ & Smith, S 2014, Characterization and development of materials for an integrated high-temperature sensor using resistive test structures. in 2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings., 6841491, Institute of Electrical and Electronics Engineers Inc., pp. 188-193, 27th International Conference on Microelectronic Test Structures, ICMTS 2014, Udine, Italy, 24/03/14. https://doi.org/10.1109/ICMTS.2014.6841491

Characterization and development of materials for an integrated high-temperature sensor using resistive test structures. / Tabasnikov, A.; Bunting, A. S.; Terry, J. G. et al.
2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. p. 188-193 6841491.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Bunting, A. S.

AU - Terry, J. G.

AU - Murray, J.

AU - Cummins, G.

AU - Zhao, C.

AU - Zhou, J.

AU - Fu, R. Y.

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N2 - This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of-150 ppm/°C which remains stable after 6 hours of annealing at 600°C.

AB - This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of-150 ppm/°C which remains stable after 6 hours of annealing at 600°C.

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KW - Sensors

KW - Sheet resistance

KW - Tantalum nitride

KW - Temperature dependence

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BT - 2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings

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Tabasnikov A, Bunting AS, Terry JG, Murray J, Cummins G, Zhao C et al. Characterization and development of materials for an integrated high-temperature sensor using resistive test structures. In 2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2014. p. 188-193. 6841491 doi: 10.1109/ICMTS.2014.6841491

Characterization and development of materials for an integrated high-temperature sensor using resistive test structures

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