Characterisation of a CMP nanoscale planarisation based process for RF MEMS resonators

S. Enderling; H. Lin; J. T M Stevenson; A. S. Bunting; A. J. Walton

doi:10.1117/12.699116

Characterisation of a CMP nanoscale planarisation based process for RF MEMS resonators

S. Enderling^*, H. Lin, J. T M Stevenson, A. S. Bunting, A. J. Walton

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper characterises a novel Chemical Mechanical Polishing (CMP) based process for the fabrication of nanometer wide transducer gaps for RF MEMS resonators. The process requires one photolithographic step less than previously reported fabrication methods and does not suffer from transducer gap widening, which otherwise strongly affects the impedance of manufactured resonators. CMP test masks were used to evaluate the ability to produce nanometer wide planarised capacitive transducer gaps and to determine the planarity of CMP based processing. As a result of this work, pattern dependent removal rates for polysilicon have been determined and design guidelines defined to optimise the yield of CMP fabricated resonators.

Original language	English
Title of host publication	Micro- and Nanotechnology
Subtitle of host publication	Materials, Processes, Packaging, and Systems III
Volume	6415
DOIs	https://doi.org/10.1117/12.699116
Publication status	Published - 30 Apr 2007
Event	Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III - Adelaide, Australia Duration: 11 Dec 2006 → 13 Dec 2006

Conference

Conference	Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III
Country/Territory	Australia
City	Adelaide
Period	11/12/06 → 13/12/06

Keywords

Chemical Mechanical Polishing (CMP)
Fabrication
Micro-Electro-Mechanical Systems (MEMS)
Nanoscale
Radio frequency (RF)
Resonators
Transducer gaps

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10.1117/12.699116

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title = "Characterisation of a CMP nanoscale planarisation based process for RF MEMS resonators",

abstract = "This paper characterises a novel Chemical Mechanical Polishing (CMP) based process for the fabrication of nanometer wide transducer gaps for RF MEMS resonators. The process requires one photolithographic step less than previously reported fabrication methods and does not suffer from transducer gap widening, which otherwise strongly affects the impedance of manufactured resonators. CMP test masks were used to evaluate the ability to produce nanometer wide planarised capacitive transducer gaps and to determine the planarity of CMP based processing. As a result of this work, pattern dependent removal rates for polysilicon have been determined and design guidelines defined to optimise the yield of CMP fabricated resonators.",

keywords = "Chemical Mechanical Polishing (CMP), Fabrication, Micro-Electro-Mechanical Systems (MEMS), Nanoscale, Radio frequency (RF), Resonators, Transducer gaps",

author = "S. Enderling and H. Lin and Stevenson, {J. T M} and Bunting, {A. S.} and Walton, {A. J.}",

year = "2007",

month = apr,

day = "30",

doi = "10.1117/12.699116",

language = "English",

isbn = "0819465232",

volume = "6415",

booktitle = "Micro- and Nanotechnology",

note = "Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III ; Conference date: 11-12-2006 Through 13-12-2006",

}

Enderling, S, Lin, H, Stevenson, JTM, Bunting, AS & Walton, AJ 2007, Characterisation of a CMP nanoscale planarisation based process for RF MEMS resonators. in Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III. vol. 6415, 64150G, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, Adelaide, Australia, 11/12/06. https://doi.org/10.1117/12.699116

TY - GEN

T1 - Characterisation of a CMP nanoscale planarisation based process for RF MEMS resonators

AU - Enderling, S.

AU - Lin, H.

AU - Stevenson, J. T M

AU - Bunting, A. S.

AU - Walton, A. J.

PY - 2007/4/30

Y1 - 2007/4/30

N2 - This paper characterises a novel Chemical Mechanical Polishing (CMP) based process for the fabrication of nanometer wide transducer gaps for RF MEMS resonators. The process requires one photolithographic step less than previously reported fabrication methods and does not suffer from transducer gap widening, which otherwise strongly affects the impedance of manufactured resonators. CMP test masks were used to evaluate the ability to produce nanometer wide planarised capacitive transducer gaps and to determine the planarity of CMP based processing. As a result of this work, pattern dependent removal rates for polysilicon have been determined and design guidelines defined to optimise the yield of CMP fabricated resonators.

AB - This paper characterises a novel Chemical Mechanical Polishing (CMP) based process for the fabrication of nanometer wide transducer gaps for RF MEMS resonators. The process requires one photolithographic step less than previously reported fabrication methods and does not suffer from transducer gap widening, which otherwise strongly affects the impedance of manufactured resonators. CMP test masks were used to evaluate the ability to produce nanometer wide planarised capacitive transducer gaps and to determine the planarity of CMP based processing. As a result of this work, pattern dependent removal rates for polysilicon have been determined and design guidelines defined to optimise the yield of CMP fabricated resonators.

KW - Chemical Mechanical Polishing (CMP)

KW - Fabrication

KW - Micro-Electro-Mechanical Systems (MEMS)

KW - Nanoscale

KW - Radio frequency (RF)

KW - Resonators

KW - Transducer gaps

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U2 - 10.1117/12.699116

DO - 10.1117/12.699116

M3 - Conference contribution

AN - SCOPUS:34247373100

SN - 0819465232

SN - 9780819465238

VL - 6415

BT - Micro- and Nanotechnology

T2 - Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III

Y2 - 11 December 2006 through 13 December 2006

ER -

Characterisation of a CMP nanoscale planarisation based process for RF MEMS resonators

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Keywords

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