CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications

Richard A. Allen; Ronald G. Dixson; Michael W. Cresswell; William F. Guthrie; Byron J R Shulver; A. S. Bunting; J. T M Stevenson; Anthony J. Walton

doi:10.1063/1.2799403

CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications

Richard A. Allen^*, Ronald G. Dixson, Michael W. Cresswell, William F. Guthrie, Byron J R Shulver, A. S. Bunting, J. T M Stevenson, Anthony J. Walton

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recently, prototype isolated-line, single-crystal critical dimension (CD) reference materials (SCCDRMs) with linewidths as narrow as 40nm±1.5nm have been reported. These reference materials, designated NIST Prototype Reference Material (RM) 8111, were configured as 10 mm by 11 mm silicon test chips mounted in 200 mm carrier wafers. The RM 8111 chips were fabricated using microelectromechanical (MEMS) process techniques, which assure the alignment of the sidewalls of the features to silicon (111) lattice planes, and were calibrated in a sequence involving atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) metrology. This paper reports initial results on SCCDRMs fabricated on 200 mm bulk wafers; this monolithic approach would eliminate the need for carrier wafers.

Original language	English
Title of host publication	CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS
Subtitle of host publication	2007 International Conference on Frontiers of Characterization and Metrology
Pages	387-391
Number of pages	5
Volume	931
DOIs	https://doi.org/10.1063/1.2799403
Publication status	Published - 22 Oct 2007
Event	CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology - Gaithersburg, MD, United States Duration: 27 Mar 2007 → 29 Mar 2007

Conference

Conference	CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology
Country/Territory	United States
City	Gaithersburg, MD
Period	27/03/07 → 29/03/07

Keywords

Critical Dimension (CD)
Linewidth
Metrology
Optical Critical Dimension (OCD)
Reference Material (RM)
Scatterometry

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10.1063/1.2799403

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Allen, R. A., Dixson, R. G., Cresswell, M. W., Guthrie, W. F., Shulver, B. J. R., Bunting, A. S., Stevenson, J. T. M., & Walton, A. J. (2007). CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications. In CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology (Vol. 931, pp. 387-391) https://doi.org/10.1063/1.2799403

@inproceedings{f392874923c648a4a0b244496cdb55f8,

title = "CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications",

abstract = "Recently, prototype isolated-line, single-crystal critical dimension (CD) reference materials (SCCDRMs) with linewidths as narrow as 40nm±1.5nm have been reported. These reference materials, designated NIST Prototype Reference Material (RM) 8111, were configured as 10 mm by 11 mm silicon test chips mounted in 200 mm carrier wafers. The RM 8111 chips were fabricated using microelectromechanical (MEMS) process techniques, which assure the alignment of the sidewalls of the features to silicon (111) lattice planes, and were calibrated in a sequence involving atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) metrology. This paper reports initial results on SCCDRMs fabricated on 200 mm bulk wafers; this monolithic approach would eliminate the need for carrier wafers.",

keywords = "Critical Dimension (CD), Linewidth, Metrology, Optical Critical Dimension (OCD), Reference Material (RM), Scatterometry",

author = "Allen, {Richard A.} and Dixson, {Ronald G.} and Cresswell, {Michael W.} and Guthrie, {William F.} and Shulver, {Byron J R} and Bunting, {A. S.} and Stevenson, {J. T M} and Walton, {Anthony J.}",

year = "2007",

month = oct,

day = "22",

doi = "10.1063/1.2799403",

language = "English",

isbn = "0735404410",

volume = "931",

pages = "387--391",

booktitle = "CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS",

note = "CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology ; Conference date: 27-03-2007 Through 29-03-2007",

}

Allen, RA, Dixson, RG, Cresswell, MW, Guthrie, WF, Shulver, BJR, Bunting, AS, Stevenson, JTM & Walton, AJ 2007, CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications. in CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. vol. 931, pp. 387-391, CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology, Gaithersburg, MD, United States, 27/03/07. https://doi.org/10.1063/1.2799403

CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications. / Allen, Richard A.; Dixson, Ronald G.; Cresswell, Michael W. et al.
CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. Vol. 931 2007. p. 387-391.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications

AU - Allen, Richard A.

AU - Dixson, Ronald G.

AU - Cresswell, Michael W.

AU - Guthrie, William F.

AU - Shulver, Byron J R

AU - Bunting, A. S.

AU - Stevenson, J. T M

AU - Walton, Anthony J.

PY - 2007/10/22

Y1 - 2007/10/22

N2 - Recently, prototype isolated-line, single-crystal critical dimension (CD) reference materials (SCCDRMs) with linewidths as narrow as 40nm±1.5nm have been reported. These reference materials, designated NIST Prototype Reference Material (RM) 8111, were configured as 10 mm by 11 mm silicon test chips mounted in 200 mm carrier wafers. The RM 8111 chips were fabricated using microelectromechanical (MEMS) process techniques, which assure the alignment of the sidewalls of the features to silicon (111) lattice planes, and were calibrated in a sequence involving atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) metrology. This paper reports initial results on SCCDRMs fabricated on 200 mm bulk wafers; this monolithic approach would eliminate the need for carrier wafers.

AB - Recently, prototype isolated-line, single-crystal critical dimension (CD) reference materials (SCCDRMs) with linewidths as narrow as 40nm±1.5nm have been reported. These reference materials, designated NIST Prototype Reference Material (RM) 8111, were configured as 10 mm by 11 mm silicon test chips mounted in 200 mm carrier wafers. The RM 8111 chips were fabricated using microelectromechanical (MEMS) process techniques, which assure the alignment of the sidewalls of the features to silicon (111) lattice planes, and were calibrated in a sequence involving atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) metrology. This paper reports initial results on SCCDRMs fabricated on 200 mm bulk wafers; this monolithic approach would eliminate the need for carrier wafers.

KW - Critical Dimension (CD)

KW - Linewidth

KW - Metrology

KW - Optical Critical Dimension (OCD)

KW - Reference Material (RM)

KW - Scatterometry

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DO - 10.1063/1.2799403

M3 - Conference contribution

AN - SCOPUS:35348922253

SN - 0735404410

SN - 9780735404410

VL - 931

SP - 387

EP - 391

BT - CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS

T2 - CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology

Y2 - 27 March 2007 through 29 March 2007

ER -

CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications

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Keywords

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