Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

Andreas Pfenning; Fabian Hartmann; Fabian Langer; Sven Hoefling; Martin Kamp; Lukas Worschech

doi:10.1063/1.4868429

Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

Andreas Pfenning^*, Fabian Hartmann, Fabian Langer, Sven Hoefling, Martin Kamp, Lukas Worschech

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a
nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1× 10⁴A/W and a response up to several pA per photon at room temperature were found.

Original language	English
Article number	101109
Number of pages	4
Journal	Applied Physics Letters
Volume	104
Issue number	10
DOIs	https://doi.org/10.1063/1.4868429
Publication status	Published - 10 Mar 2014

Keywords

Single-photon source
1.3 MU-M
GaInNAs
Laser
Diode
GaAS

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@article{4303f7394e0d4c7fbbe061acdea69b43,

title = "Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths",

abstract = "An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1× 10 4 A/W and a response up to several pA per photon at room temperature were found.",

keywords = "Single-photon source, 1.3 MU-M, GaInNAs , Laser, Diode, GaAS",

author = "Andreas Pfenning and Fabian Hartmann and Fabian Langer and Sven Hoefling and Martin Kamp and Lukas Worschech",

note = "This work is supported by the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 LANDAUER)",

year = "2014",

month = mar,

day = "10",

doi = "10.1063/1.4868429",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

AU - Pfenning, Andreas

AU - Hartmann, Fabian

AU - Langer, Fabian

AU - Hoefling, Sven

AU - Kamp, Martin

AU - Worschech, Lukas

N1 - This work is supported by the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 LANDAUER)

PY - 2014/3/10

Y1 - 2014/3/10

N2 - An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1× 10 4 A/W and a response up to several pA per photon at room temperature were found.

AB - An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1× 10 4 A/W and a response up to several pA per photon at room temperature were found.

KW - Single-photon source

KW - 1.3 MU-M

KW - GaInNAs

KW - Laser

KW - Diode

KW - GaAS

UR - https://www.scopus.com/pages/publications/84896284045

U2 - 10.1063/1.4868429

DO - 10.1063/1.4868429

M3 - Article

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101109

ER -

Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

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Keywords

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