Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

Andreas Pfenning*, Fabian Hartmann, Fabian Langer, Sven Hoefling, Martin Kamp, Lukas Worschech

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a
nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1× 10 4 A/W and a response up to several pA per photon at room temperature were found.

Original languageEnglish
Article number101109
Number of pages4
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 10 Mar 2014


  • Single-photon source
  • 1.3 MU-M
  • GaInNAs
  • Laser
  • Diode
  • GaAS


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