Carrier trapping and luminescence polarization in quantum dashes

A. Musial*, P. Kaczmarkiewicz, G. Sek, P. Podemski, P. Machnikowski, J. Misiewicz, S. Hein, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

We study experimentally and theoretically polarization-dependent luminescence from an ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy (quantum dashes). We show that the measured degree of linear polarization of the emitted light increases with the excitation power and changes with temperature in a nontrivialway, depending on the excitation conditions. Using an approximate model based on the k . p theory, we are able to relate this degree of polarization to the amount of light-hole admixture in the exciton states which, in turn, depends on the symmetry of the envelope wave function. Agreement between themeasured properties and theory is reached under assumption that the ground exciton state in a quantum dash is trapped in a confinement fluctuation within the structure and thus localized in a much smaller volume of lower asymmetry than the entire nanostructure.

Original languageEnglish
Article number035314
Number of pages11
JournalPhysical Review. B, Condensed matter and materials physics
Volume85
Issue number3
DOIs
Publication statusPublished - 17 Jan 2012

Keywords

  • MAGNETOOPTICAL INVESTIGATIONS
  • ELECTRONIC-STRUCTURE
  • INP SUBSTRATE
  • DOTS
  • LASERS

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