Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

M. Dyksik; M. Motyka; R. Weih; S. Höfling; M. Kamp; G. Sęk; J. Misiewicz

doi:10.1007/s11082-017-0891-0

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

M. Dyksik, M. Motyka, R. Weih, S. Höfling, M. Kamp, G. Sęk, J. Misiewicz

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170—200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the low-energy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13—15 meV.

Original language	English
Article number	59
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	49
Issue number	2
Early online date	16 Jan 2017
DOIs	https://doi.org/10.1007/s11082-017-0891-0
Publication status	Published - Feb 2017

Keywords

Fourier-transform infrared spectroscopy
Type II quantum wells
Photoluminescence quenching
Carrier transfer
Localized states

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Hoefling_2017_OQE_QuantumWells_CC
© The Author(s) 2017. Open Access. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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Cite this

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title = "Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells",

abstract = "Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170—200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the low-energy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13—15 meV.",

keywords = "Fourier-transform infrared spectroscopy, Type II quantum wells, Photoluminescence quenching, Carrier transfer, Localized states",

author = "M. Dyksik and M. Motyka and R. Weih and S. H{\"o}fling and M. Kamp and G. S{\c e}k and J. Misiewicz",

note = "The work has been supported from iCspec project, which received funding from the European Commission{\textquoteright}s Horizon 2020 Research and Innovation Programme under grant agreement No. 636930, and also by the National Science Centre of Poland within Grant No. 2014/15/B/ST7/04663.",

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doi = "10.1007/s11082-017-0891-0",

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AU - Dyksik, M.

AU - Motyka, M.

AU - Weih, R.

AU - Höfling, S.

AU - Kamp, M.

AU - Sęk, G.

AU - Misiewicz, J.

N1 - The work has been supported from iCspec project, which received funding from the European Commission’s Horizon 2020 Research and Innovation Programme under grant agreement No. 636930, and also by the National Science Centre of Poland within Grant No. 2014/15/B/ST7/04663.

PY - 2017/2

Y1 - 2017/2

N2 - Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170—200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the low-energy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13—15 meV.

AB - Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170—200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the low-energy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13—15 meV.

KW - Fourier-transform infrared spectroscopy

KW - Type II quantum wells

KW - Photoluminescence quenching

KW - Carrier transfer

KW - Localized states

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DO - 10.1007/s11082-017-0891-0

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JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 2

M1 - 59

ER -

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

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