Carrier heating in semiconductor optical amplifier-based Sagnac-type all-optical switch

Alvaro Gomez-Iglesias; Julia G Fenn; Michael Mazilu; R J Manning; Alan Miller

doi:10.1088/0268-1242/21/12/034

Carrier heating in semiconductor optical amplifier-based Sagnac-type all-optical switch

Alvaro Gomez-Iglesias, Julia G Fenn, Michael Mazilu, R J Manning, Alan Miller

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

We report the observation of ultrafast dynamics in interferometric switching using an InGaAs quantum-well laser amplifier. The switching windows, measured in a three-beam pump-probe interferometric set-up using sub-picojoule pulses of 800 fs duration at 1.57 mu m wavelength, reveal an ultrafast (similar to 2 ps) feature. This reshaping of the switching window edge was found to change substantially with the pump pulse energy, and is attributed to refractive index changes caused by the heating of the carrier distribution in the amplifier. A rate-equation model is used to analyse these results, showing very good agreement with the experimental evidence.

Original language	English
Pages (from-to)	1703-1708
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	21
DOIs	https://doi.org/10.1088/0268-1242/21/12/034
Publication status	Published - Dec 2006

Keywords

LASER-AMPLIFIERS
PHASE MODULATION
SELF-PHASE
INTERFEROMETER
GAIN
NONLINEARITIES

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10.1088/0268-1242/21/12/034

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title = "Carrier heating in semiconductor optical amplifier-based Sagnac-type all-optical switch",

abstract = "We report the observation of ultrafast dynamics in interferometric switching using an InGaAs quantum-well laser amplifier. The switching windows, measured in a three-beam pump-probe interferometric set-up using sub-picojoule pulses of 800 fs duration at 1.57 mu m wavelength, reveal an ultrafast (similar to 2 ps) feature. This reshaping of the switching window edge was found to change substantially with the pump pulse energy, and is attributed to refractive index changes caused by the heating of the carrier distribution in the amplifier. A rate-equation model is used to analyse these results, showing very good agreement with the experimental evidence.",

keywords = "LASER-AMPLIFIERS, PHASE MODULATION, SELF-PHASE, INTERFEROMETER, GAIN, NONLINEARITIES",

author = "Alvaro Gomez-Iglesias and Fenn, {Julia G} and Michael Mazilu and Manning, {R J} and Alan Miller",

year = "2006",

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doi = "10.1088/0268-1242/21/12/034",

language = "English",

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T1 - Carrier heating in semiconductor optical amplifier-based Sagnac-type all-optical switch

AU - Gomez-Iglesias, Alvaro

AU - Fenn, Julia G

AU - Mazilu, Michael

AU - Manning, R J

AU - Miller, Alan

PY - 2006/12

Y1 - 2006/12

N2 - We report the observation of ultrafast dynamics in interferometric switching using an InGaAs quantum-well laser amplifier. The switching windows, measured in a three-beam pump-probe interferometric set-up using sub-picojoule pulses of 800 fs duration at 1.57 mu m wavelength, reveal an ultrafast (similar to 2 ps) feature. This reshaping of the switching window edge was found to change substantially with the pump pulse energy, and is attributed to refractive index changes caused by the heating of the carrier distribution in the amplifier. A rate-equation model is used to analyse these results, showing very good agreement with the experimental evidence.

AB - We report the observation of ultrafast dynamics in interferometric switching using an InGaAs quantum-well laser amplifier. The switching windows, measured in a three-beam pump-probe interferometric set-up using sub-picojoule pulses of 800 fs duration at 1.57 mu m wavelength, reveal an ultrafast (similar to 2 ps) feature. This reshaping of the switching window edge was found to change substantially with the pump pulse energy, and is attributed to refractive index changes caused by the heating of the carrier distribution in the amplifier. A rate-equation model is used to analyse these results, showing very good agreement with the experimental evidence.

KW - LASER-AMPLIFIERS

KW - PHASE MODULATION

KW - SELF-PHASE

KW - INTERFEROMETER

KW - GAIN

KW - NONLINEARITIES

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U2 - 10.1088/0268-1242/21/12/034

DO - 10.1088/0268-1242/21/12/034

M3 - Article

SN - 0268-1242

VL - 21

SP - 1703

EP - 1708

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -

Carrier heating in semiconductor optical amplifier-based Sagnac-type all-optical switch

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Keywords

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