Buried dielectric mirrors for the lateral overgrowth of GaN-based microccavities

RW Martin; PR Edwards; R Pecharroman-Gallego; C Traeger-Cowan; T Kim; HS Kim; IN Watson; MD Dawson; Thomas Fraser Krauss; JH Marsh; RM De La Rue

Buried dielectric mirrors for the lateral overgrowth of GaN-based microccavities

RW Martin, PR Edwards, R Pecharroman-Gallego, C Traeger-Cowan, T Kim, HS Kim, IN Watson, MD Dawson, Thomas Fraser Krauss, JH Marsh, RM De La Rue

School of Physics and Astronomy

Research output: Other contribution

Abstract

The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99% at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.

Original language	English
Volume	183
Publication status	Published - Jan 2001

Keywords

SURFACE-EMITTING LASER

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@misc{a7c1148fe4394f109f0eebb41355747a,

title = "Buried dielectric mirrors for the lateral overgrowth of GaN-based microccavities",

abstract = "The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99% at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.",

keywords = "SURFACE-EMITTING LASER",

author = "RW Martin and PR Edwards and R Pecharroman-Gallego and C Traeger-Cowan and T Kim and HS Kim and IN Watson and MD Dawson and Krauss, {Thomas Fraser} and JH Marsh and {De La Rue}, RM",

note = "Phys Stat Solidi A",

year = "2001",

month = jan,

language = "English",

volume = "183",

type = "Other",

}

TY - GEN

T1 - Buried dielectric mirrors for the lateral overgrowth of GaN-based microccavities

AU - Martin, RW

AU - Edwards, PR

AU - Pecharroman-Gallego, R

AU - Traeger-Cowan, C

AU - Kim, T

AU - Kim, HS

AU - Watson, IN

AU - Dawson, MD

AU - Krauss, Thomas Fraser

AU - Marsh, JH

AU - De La Rue, RM

N1 - Phys Stat Solidi A

PY - 2001/1

Y1 - 2001/1

N2 - The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99% at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.

AB - The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99% at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.

KW - SURFACE-EMITTING LASER

M3 - Other contribution

VL - 183

ER -

Buried dielectric mirrors for the lateral overgrowth of GaN-based microccavities

Abstract

Keywords

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