Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Sebastian Unsleber; Michael Deppisch; Christian M. Krammel; Minh Vo; Christopher D. Yerino; Paul J. Simmonds; Minjoo Larry Lee; Paul M. Koenraad; Christian Schneider; Sven Hoefling

doi:10.1364/OE.24.023198

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Sebastian Unsleber, Michael Deppisch, Christian M. Krammel, Minh Vo, Christopher D. Yerino, Paul J. Simmonds, Minjoo Larry Lee, Paul M. Koenraad, Christian Schneider, Sven Hoefling

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Abstract

In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al_0:48In_0:52As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k•p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence
spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 meV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g⁽²⁾-values as low as g⁽²⁾/cw (0) = 0:05+0:17/-0:05 for continuous wave (cw) excitation and
g ⁽²⁾ pulsed, corr. = 0:24 ± 0:02 for pulsed excitation.

Original language	English
Pages (from-to)	23198-23206
Journal	Optics Express
Volume	24
Issue number	20
Early online date	27 Sept 2016
DOIs	https://doi.org/10.1364/OE.24.023198
Publication status	Published - 3 Oct 2016

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© 2016, Optical Society of America. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at www.osapublishing.org / https://dx.doi.org/10.1364/OE.24.023198
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@article{5600eb815a3f4320ba4c78350195bf21,

title = "Bulk AlInAs on InP(111) as a novel material system for pure single photon emission",

abstract = "In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al0:48In0:52As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k•p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescencespectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 meV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g(2)-values as low as g(2)/cw (0) = 0:05+0:17/-0:05 for continuous wave (cw) excitation andg (2) pulsed, corr. = 0:24 ± 0:02 for pulsed excitation.",

author = "Sebastian Unsleber and Michael Deppisch and Krammel, {Christian M.} and Minh Vo and Yerino, {Christopher D.} and Simmonds, {Paul J.} and Lee, {Minjoo Larry} and Koenraad, {Paul M.} and Christian Schneider and Sven Hoefling",

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doi = "10.1364/OE.24.023198",

language = "English",

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T1 - Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

AU - Unsleber, Sebastian

AU - Deppisch, Michael

AU - Krammel, Christian M.

AU - Vo, Minh

AU - Yerino, Christopher D.

AU - Simmonds, Paul J.

AU - Lee, Minjoo Larry

AU - Koenraad, Paul M.

AU - Schneider, Christian

AU - Hoefling, Sven

PY - 2016/10/3

Y1 - 2016/10/3

N2 - In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al0:48In0:52As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k•p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescencespectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 meV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g(2)-values as low as g(2)/cw (0) = 0:05+0:17/-0:05 for continuous wave (cw) excitation andg (2) pulsed, corr. = 0:24 ± 0:02 for pulsed excitation.

AB - In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al0:48In0:52As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k•p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescencespectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 meV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g(2)-values as low as g(2)/cw (0) = 0:05+0:17/-0:05 for continuous wave (cw) excitation andg (2) pulsed, corr. = 0:24 ± 0:02 for pulsed excitation.

U2 - 10.1364/OE.24.023198

DO - 10.1364/OE.24.023198

M3 - Article

SN - 1094-4087

VL - 24

SP - 23198

EP - 23206

JO - Optics Express

JF - Optics Express

IS - 20

ER -

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

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