Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Sebastian Unsleber, Michael Deppisch, Christian M. Krammel, Minh Vo, Christopher D. Yerino, Paul J. Simmonds, Minjoo Larry Lee, Paul M. Koenraad, Christian Schneider, Sven Hoefling

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al0:48In0:52As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k•p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence
spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 meV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g(2)-values as low as g(2)/cw (0) = 0:05+0:17/-0:05 for continuous wave (cw) excitation and
g (2) pulsed, corr. = 0:24 ± 0:02 for pulsed excitation.
Original languageEnglish
Pages (from-to)23198-23206
JournalOptics Express
Issue number20
Early online date27 Sept 2016
Publication statusPublished - 3 Oct 2016


Dive into the research topics of 'Bulk AlInAs on InP(111) as a novel material system for pure single photon emission'. Together they form a unique fingerprint.

Cite this