Broad spectral bandwidth semiconductor lasers

Thomas Fraser Krauss, G Hondromitros, B Voegele, RM De La Rue

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


Wavelength-tuned semiconductorlasers have been realised in a GaAs/AlGaAs structure in which the active layer contains three different sizes of quantum will. Extended cavity operation with an external grating has enabled a useful tuning range of 88 nm (778-866 nm) to be demonstrated while the threshold current varied by no more than 20 mA about a nominal value of 100 mA across the tuning range. Alternatively, the wide spectral bandwidth of the structure could be used in very short-pulse modelocked lasers.

Original languageEnglish
Pages (from-to)1142-1143
Number of pages2
JournalElectronics Letters
Issue number13
Publication statusPublished - 19 Jun 1997


  • semiconductor lasers
  • gallium arsenide


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