Broad spectral bandwidth semiconductor lasers

Thomas Fraser Krauss; G Hondromitros; B Voegele; RM De La Rue

Broad spectral bandwidth semiconductor lasers

Thomas Fraser Krauss, G Hondromitros, B Voegele, RM De La Rue

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Wavelength-tuned semiconductorlasers have been realised in a GaAs/AlGaAs structure in which the active layer contains three different sizes of quantum will. Extended cavity operation with an external grating has enabled a useful tuning range of 88 nm (778-866 nm) to be demonstrated while the threshold current varied by no more than 20 mA about a nominal value of 100 mA across the tuning range. Alternatively, the wide spectral bandwidth of the structure could be used in very short-pulse modelocked lasers.

Original language	English
Pages (from-to)	1142-1143
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	13
Publication status	Published - 19 Jun 1997

Keywords

semiconductor lasers
gallium arsenide
QUANTUM-WELL LASERS

Cite this

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AB - Wavelength-tuned semiconductorlasers have been realised in a GaAs/AlGaAs structure in which the active layer contains three different sizes of quantum will. Extended cavity operation with an external grating has enabled a useful tuning range of 88 nm (778-866 nm) to be demonstrated while the threshold current varied by no more than 20 mA about a nominal value of 100 mA across the tuning range. Alternatively, the wide spectral bandwidth of the structure could be used in very short-pulse modelocked lasers.

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Broad spectral bandwidth semiconductor lasers

Abstract

Keywords

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