Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge

S I  Budzulyak; J P  Dotsenko; A E  Gorin; V V  Kolomoets; V F  Machulin; V N  Ermakov; E F  Venger; E  Liarokapis; D P  Tunstall

Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge

S I Budzulyak, J P Dotsenko, A E Gorin, V V Kolomoets, V F Machulin, V N Ermakov, E F Venger, E Liarokapis, D P Tunstall

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Localization of electrons on hydrogenic impurity atoms in Si and Ge and their delocalization by electric field breakdown of the localized states were examined on the insulating side of a strain-induced metal-nonmetal transition. Both nonlinear and linear dependencies of the breakdown field on activation energy were obtained. Experimental results were explained taking into account a crucial transformation of silicon and germanium conduction band structure under extremely high uniaxial pressure.

Original language	English
Pages (from-to)	137-142
Number of pages	6
Journal	Physica Status Solidi. B
Volume	211
Publication status	Published - Jan 1999

Keywords

CONDUCTIVITY

Cite this

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title = "Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge",

abstract = "Localization of electrons on hydrogenic impurity atoms in Si and Ge and their delocalization by electric field breakdown of the localized states were examined on the insulating side of a strain-induced metal-nonmetal transition. Both nonlinear and linear dependencies of the breakdown field on activation energy were obtained. Experimental results were explained taking into account a crucial transformation of silicon and germanium conduction band structure under extremely high uniaxial pressure.",

keywords = "CONDUCTIVITY",

author = "Budzulyak, {S I} and Dotsenko, {J P} and Gorin, {A E} and Kolomoets, {V V} and Machulin, {V F} and Ermakov, {V N} and Venger, {E F} and E Liarokapis and Tunstall, {D P}",

year = "1999",

month = jan,

language = "English",

volume = "211",

pages = "137--142",

journal = "Physica Status Solidi. B",

issn = "0370-1972",

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TY - JOUR

T1 - Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge

AU - Budzulyak, S I

AU - Dotsenko, J P

AU - Gorin, A E

AU - Kolomoets, V V

AU - Machulin, V F

AU - Ermakov, V N

AU - Venger, E F

AU - Liarokapis, E

AU - Tunstall, D P

PY - 1999/1

Y1 - 1999/1

N2 - Localization of electrons on hydrogenic impurity atoms in Si and Ge and their delocalization by electric field breakdown of the localized states were examined on the insulating side of a strain-induced metal-nonmetal transition. Both nonlinear and linear dependencies of the breakdown field on activation energy were obtained. Experimental results were explained taking into account a crucial transformation of silicon and germanium conduction band structure under extremely high uniaxial pressure.

AB - Localization of electrons on hydrogenic impurity atoms in Si and Ge and their delocalization by electric field breakdown of the localized states were examined on the insulating side of a strain-induced metal-nonmetal transition. Both nonlinear and linear dependencies of the breakdown field on activation energy were obtained. Experimental results were explained taking into account a crucial transformation of silicon and germanium conduction band structure under extremely high uniaxial pressure.

KW - CONDUCTIVITY

M3 - Article

SN - 0370-1972

VL - 211

SP - 137

EP - 142

JO - Physica Status Solidi. B

JF - Physica Status Solidi. B

ER -

Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge

Abstract

Keywords

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