Bose-einstein condensation of exciton polaritons in high-Q planar microcavities with GaAs quantum wells

V. D. Kulakovskii; A. V. Larionov; S. I. Novikov; Sven Höfling; Ch. Schneider; A. Forchel

doi:10.1134/S002136401021006X

Bose-einstein condensation of exciton polaritons in high-Q planar microcavities with GaAs quantum wells

V. D. Kulakovskii^*, A. V. Larionov, S. I. Novikov, Sven Höfling, Ch. Schneider, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Condensation of exciton polaritons in planar microcavities with GaAs/AlAs quantum wells in the active area has been studied. It has been found that an increase in the lifetime of polaritons up to similar to 10-15 ps when the Q factor of a microcavity exceeds 7000 makes it possible to detect Bose-Einstein condensation of polaritons with a dominant (> 90%) photon component. Condensation occurs under thermodynamically nonequilibrium conditions in lateral traps with diameters similar to 10 mu m formed due to long-range fluctuations of the polariton potential. The violet shift of the polariton emission line at the condensation threshold significantly exceeds the energy of the repulsive interaction between polaritons in the condensate. It has been shown that the shift is mainly due to a decrease in the oscillator strength of bright excitons in lateral traps, caused by the localization of photoexcited long-living dark excitons.

Original language	English
Pages (from-to)	595-599
Number of pages	5
Journal	JETP Letters
Volume	92
Issue number	9
DOIs	https://doi.org/10.1134/S002136401021006X
Publication status	Published - Jan 2011

Keywords

SEMICONDUCTOR MICROCAVITIES
STIMULATED SCATTERING

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title = "Bose-einstein condensation of exciton polaritons in high-Q planar microcavities with GaAs quantum wells",

abstract = "Condensation of exciton polaritons in planar microcavities with GaAs/AlAs quantum wells in the active area has been studied. It has been found that an increase in the lifetime of polaritons up to similar to 10-15 ps when the Q factor of a microcavity exceeds 7000 makes it possible to detect Bose-Einstein condensation of polaritons with a dominant (> 90%) photon component. Condensation occurs under thermodynamically nonequilibrium conditions in lateral traps with diameters similar to 10 mu m formed due to long-range fluctuations of the polariton potential. The violet shift of the polariton emission line at the condensation threshold significantly exceeds the energy of the repulsive interaction between polaritons in the condensate. It has been shown that the shift is mainly due to a decrease in the oscillator strength of bright excitons in lateral traps, caused by the localization of photoexcited long-living dark excitons.",

keywords = "SEMICONDUCTOR MICROCAVITIES, STIMULATED SCATTERING",

author = "Kulakovskii, {V. D.} and Larionov, {A. V.} and Novikov, {S. I.} and Sven H{\"o}fling and Ch. Schneider and A. Forchel",

year = "2011",

month = jan,

doi = "10.1134/S002136401021006X",

language = "English",

volume = "92",

pages = "595--599",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "Maik Nauka-Interperiodica Publishing",

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TY - JOUR

T1 - Bose-einstein condensation of exciton polaritons in high-Q planar microcavities with GaAs quantum wells

AU - Kulakovskii, V. D.

AU - Larionov, A. V.

AU - Novikov, S. I.

AU - Höfling, Sven

AU - Schneider, Ch.

AU - Forchel, A.

PY - 2011/1

Y1 - 2011/1

N2 - Condensation of exciton polaritons in planar microcavities with GaAs/AlAs quantum wells in the active area has been studied. It has been found that an increase in the lifetime of polaritons up to similar to 10-15 ps when the Q factor of a microcavity exceeds 7000 makes it possible to detect Bose-Einstein condensation of polaritons with a dominant (> 90%) photon component. Condensation occurs under thermodynamically nonequilibrium conditions in lateral traps with diameters similar to 10 mu m formed due to long-range fluctuations of the polariton potential. The violet shift of the polariton emission line at the condensation threshold significantly exceeds the energy of the repulsive interaction between polaritons in the condensate. It has been shown that the shift is mainly due to a decrease in the oscillator strength of bright excitons in lateral traps, caused by the localization of photoexcited long-living dark excitons.

AB - Condensation of exciton polaritons in planar microcavities with GaAs/AlAs quantum wells in the active area has been studied. It has been found that an increase in the lifetime of polaritons up to similar to 10-15 ps when the Q factor of a microcavity exceeds 7000 makes it possible to detect Bose-Einstein condensation of polaritons with a dominant (> 90%) photon component. Condensation occurs under thermodynamically nonequilibrium conditions in lateral traps with diameters similar to 10 mu m formed due to long-range fluctuations of the polariton potential. The violet shift of the polariton emission line at the condensation threshold significantly exceeds the energy of the repulsive interaction between polaritons in the condensate. It has been shown that the shift is mainly due to a decrease in the oscillator strength of bright excitons in lateral traps, caused by the localization of photoexcited long-living dark excitons.

KW - SEMICONDUCTOR MICROCAVITIES

KW - STIMULATED SCATTERING

U2 - 10.1134/S002136401021006X

DO - 10.1134/S002136401021006X

M3 - Article

SN - 0021-3640

VL - 92

SP - 595

EP - 599

JO - JETP Letters

JF - JETP Letters

IS - 9

ER -

Bose-einstein condensation of exciton polaritons in high-Q planar microcavities with GaAs quantum wells

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Keywords

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