Bandgap and effective mass of epitaxial cadmium oxide

P. H. Jefferson; S. A. Hatfield; T. D. Veal; P. D. C. King; C. F. McConville; J. Zuniga-Perez; V. Munoz-Sanjose

doi:10.1063/1.2833269

Bandgap and effective mass of epitaxial cadmium oxide

P. H. Jefferson, S. A. Hatfield, T. D. Veal, P. D. C. King, C. F. McConville, J. Zuniga-Perez, V. Munoz-Sanjose

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163 Citations (Scopus)

Abstract

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16 +/- 0.02 eV and 0.21 +/- 0.01m(0) respectively. (c) 2008 American Institute of Physics.

Original language	English
Pages (from-to)	022101
Number of pages	3
Journal	Applied Physics Letters
Volume	92
Issue number	2
DOIs	https://doi.org/10.1063/1.2833269
Publication status	Published - 14 Jan 2008

Keywords

CDO

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10.1063/1.2833269

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title = "Bandgap and effective mass of epitaxial cadmium oxide",

abstract = "The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16 +/- 0.02 eV and 0.21 +/- 0.01m(0) respectively. (c) 2008 American Institute of Physics.",

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author = "Jefferson, {P. H.} and Hatfield, {S. A.} and Veal, {T. D.} and King, {P. D. C.} and McConville, {C. F.} and J. Zuniga-Perez and V. Munoz-Sanjose",

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T1 - Bandgap and effective mass of epitaxial cadmium oxide

AU - Jefferson, P. H.

AU - Hatfield, S. A.

AU - Veal, T. D.

AU - King, P. D. C.

AU - McConville, C. F.

AU - Zuniga-Perez, J.

AU - Munoz-Sanjose, V.

PY - 2008/1/14

Y1 - 2008/1/14

N2 - The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16 +/- 0.02 eV and 0.21 +/- 0.01m(0) respectively. (c) 2008 American Institute of Physics.

AB - The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16 +/- 0.02 eV and 0.21 +/- 0.01m(0) respectively. (c) 2008 American Institute of Physics.

KW - CDO

U2 - 10.1063/1.2833269

DO - 10.1063/1.2833269

M3 - Article

SN - 0003-6951

VL - 92

SP - 022101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Bandgap and effective mass of epitaxial cadmium oxide

Abstract

Keywords

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