Bandgap and effective mass of epitaxial cadmium oxide

P. H. Jefferson, S. A. Hatfield, T. D. Veal, P. D. C. King, C. F. McConville, J. Zuniga-Perez, V. Munoz-Sanjose

Research output: Contribution to journalArticlepeer-review

139 Citations (Scopus)

Abstract

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16 +/- 0.02 eV and 0.21 +/- 0.01m(0) respectively. (c) 2008 American Institute of Physics.

Original languageEnglish
Pages (from-to)022101
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number2
DOIs
Publication statusPublished - 14 Jan 2008

Keywords

  • CDO

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