Band bending at the surfaces of In-rich InGaN alloys

L. R. Bailey; T. D. Veal; P. D. C. King; C. F. McConville; J. Pereiro; J. Grandal; M. A. Sanchez-Garcia; E. Munoz; E. Calleja

doi:10.1063/1.3033373

Band bending at the surfaces of In-rich InGaN alloys

L. R. Bailey, T. D. Veal, P. D. C. King, C. F. McConville, J. Pereiro, J. Grandal, M. A. Sanchez-Garcia, E. Munoz, E. Calleja

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1-xN alloys with a composition range of 0.39 <= x <= 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 x 10(12) to 1.5 x 10(13) cm(-2). The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. c 2008 American Institute of Physics. [DOI: 10.1063/1.3033373]

Original language	English
Pages (from-to)	113716
Number of pages	6
Journal	Journal of Applied Physics
Volume	104
Issue number	11
DOIs	https://doi.org/10.1063/1.3033373
Publication status	Published - 1 Dec 2008

Keywords

ACCUMULATION LAYERS
INFRARED REFLECTIVITY
ELECTRON ACCUMULATION
ATOMIC-HYDROGEN
N-TYPE
GAP
NITRIDE
FILMS
GAN(0001)-(1X1)
SEMICONDUCTORS

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10.1063/1.3033373

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@article{9e2a49d96ff14b11a66c0601c45e996b,

title = "Band bending at the surfaces of In-rich InGaN alloys",

abstract = "The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1-xN alloys with a composition range of 0.39 <= x <= 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 x 10(12) to 1.5 x 10(13) cm(-2). The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. c 2008 American Institute of Physics. [DOI: 10.1063/1.3033373]",

keywords = "ACCUMULATION LAYERS, INFRARED REFLECTIVITY, ELECTRON ACCUMULATION, ATOMIC-HYDROGEN, N-TYPE, GAP, NITRIDE, FILMS, GAN(0001)-(1X1), SEMICONDUCTORS",

author = "Bailey, {L. R.} and Veal, {T. D.} and King, {P. D. C.} and McConville, {C. F.} and J. Pereiro and J. Grandal and Sanchez-Garcia, {M. A.} and E. Munoz and E. Calleja",

year = "2008",

month = dec,

day = "1",

doi = "10.1063/1.3033373",

language = "English",

volume = "104",

pages = "113716",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Band bending at the surfaces of In-rich InGaN alloys

AU - Bailey, L. R.

AU - Veal, T. D.

AU - King, P. D. C.

AU - McConville, C. F.

AU - Pereiro, J.

AU - Grandal, J.

AU - Sanchez-Garcia, M. A.

AU - Munoz, E.

AU - Calleja, E.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1-xN alloys with a composition range of 0.39 <= x <= 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 x 10(12) to 1.5 x 10(13) cm(-2). The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. c 2008 American Institute of Physics. [DOI: 10.1063/1.3033373]

AB - The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1-xN alloys with a composition range of 0.39 <= x <= 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 x 10(12) to 1.5 x 10(13) cm(-2). The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. c 2008 American Institute of Physics. [DOI: 10.1063/1.3033373]

KW - ACCUMULATION LAYERS

KW - INFRARED REFLECTIVITY

KW - ELECTRON ACCUMULATION

KW - ATOMIC-HYDROGEN

KW - N-TYPE

KW - GAP

KW - NITRIDE

KW - FILMS

KW - GAN(0001)-(1X1)

KW - SEMICONDUCTORS

U2 - 10.1063/1.3033373

DO - 10.1063/1.3033373

M3 - Article

SN - 0021-8979

VL - 104

SP - 113716

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Band bending at the surfaces of In-rich InGaN alloys

Abstract

Keywords

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