Band bending at the surfaces of In-rich InGaN alloys

L. R. Bailey, T. D. Veal, P. D. C. King, C. F. McConville, J. Pereiro, J. Grandal, M. A. Sanchez-Garcia, E. Munoz, E. Calleja

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33 Citations (Scopus)

Abstract

The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1-xN alloys with a composition range of 0.39 <= x <= 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 x 10(12) to 1.5 x 10(13) cm(-2). The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. c 2008 American Institute of Physics. [DOI: 10.1063/1.3033373]

Original languageEnglish
Pages (from-to)113716
Number of pages6
JournalJournal of Applied Physics
Volume104
Issue number11
DOIs
Publication statusPublished - 1 Dec 2008

Keywords

  • ACCUMULATION LAYERS
  • INFRARED REFLECTIVITY
  • ELECTRON ACCUMULATION
  • ATOMIC-HYDROGEN
  • N-TYPE
  • GAP
  • NITRIDE
  • FILMS
  • GAN(0001)-(1X1)
  • SEMICONDUCTORS

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