As doping in (Hg,Cd)Te: An alternative point of view

Janet E. Hails; Stuart J. C. Irvine; David J. Cole-Hamilton; Jean Giess; Michael R. Houlton; Andrew Graham

doi:10.1007/s11664-008-0452-1

As doping in (Hg,Cd)Te: An alternative point of view

Janet E. Hails, Stuart J. C. Irvine, David J. Cole-Hamilton, Jean Giess, Michael R. Houlton, Andrew Graham

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg1-xCdxTe) with arsenic is no exception. High-temperature (> 400 degrees C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

Original language	English
Pages (from-to)	1291-1302
Number of pages	12
Journal	Journal of Electronic Materials
Volume	37
DOIs	https://doi.org/10.1007/s11664-008-0452-1
Publication status	Published - Sept 2008

Keywords

arsenic doping
p-type doping
MCT
mercury cadmium telluride
CMT
cadmium mercury telluride
(Hg, Cd)Te
MOLECULAR-BEAM EPITAXY
VAPOR-PHASE EPITAXY
ARSENIC-DOPED HGCDTE
MOVPE-GROWN CDTE
P-TYPE ZNSE
HYDROGEN PASSIVATION
ELECTRICAL-PROPERTIES
ACCEPTOR IMPURITIES
NITROGEN ACCEPTORS
LABELED PRECURSORS

Access to Document

10.1007/s11664-008-0452-1

Cite this

@article{7cbb7b9f97454befb005417e9fce81a4,

title = "As doping in (Hg,Cd)Te: An alternative point of view",

abstract = "Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg1-xCdxTe) with arsenic is no exception. High-temperature (> 400 degrees C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.",

keywords = "arsenic doping, p-type doping, MCT, mercury cadmium telluride, CMT, cadmium mercury telluride, (Hg, Cd)Te, MOLECULAR-BEAM EPITAXY, VAPOR-PHASE EPITAXY, ARSENIC-DOPED HGCDTE, MOVPE-GROWN CDTE, P-TYPE ZNSE, HYDROGEN PASSIVATION, ELECTRICAL-PROPERTIES, ACCEPTOR IMPURITIES, NITROGEN ACCEPTORS, LABELED PRECURSORS",

author = "Hails, {Janet E.} and Irvine, {Stuart J. C.} and Cole-Hamilton, {David J.} and Jean Giess and Houlton, {Michael R.} and Andrew Graham",

year = "2008",

month = sep,

doi = "10.1007/s11664-008-0452-1",

language = "English",

volume = "37",

pages = "1291--1302",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

}

TY - JOUR

T1 - As doping in (Hg,Cd)Te: An alternative point of view

AU - Hails, Janet E.

AU - Irvine, Stuart J. C.

AU - Cole-Hamilton, David J.

AU - Giess, Jean

AU - Houlton, Michael R.

AU - Graham, Andrew

PY - 2008/9

Y1 - 2008/9

N2 - Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg1-xCdxTe) with arsenic is no exception. High-temperature (> 400 degrees C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

AB - Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg1-xCdxTe) with arsenic is no exception. High-temperature (> 400 degrees C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

KW - arsenic doping

KW - p-type doping

KW - MCT

KW - mercury cadmium telluride

KW - CMT

KW - cadmium mercury telluride

KW - (Hg, Cd)Te

KW - MOLECULAR-BEAM EPITAXY

KW - VAPOR-PHASE EPITAXY

KW - ARSENIC-DOPED HGCDTE

KW - MOVPE-GROWN CDTE

KW - P-TYPE ZNSE

KW - HYDROGEN PASSIVATION

KW - ELECTRICAL-PROPERTIES

KW - ACCEPTOR IMPURITIES

KW - NITROGEN ACCEPTORS

KW - LABELED PRECURSORS

UR - http://www.scopus.com/inward/record.url?scp=51949096102&partnerID=8YFLogxK

U2 - 10.1007/s11664-008-0452-1

DO - 10.1007/s11664-008-0452-1

M3 - Article

SN - 0361-5235

VL - 37

SP - 1291

EP - 1302

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

ER -

As doping in (Hg,Cd)Te: An alternative point of view

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this