An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs

H. C. Duran; R. Cheung; W. Patrick; W. Bächtold; I. Pfund; G. Hähner

doi:10.1016/S0167-9317(96)00150-5

An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs

H. C. Duran^*, R. Cheung, W. Patrick, W. Bächtold, I. Pfund, G. Hähner

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Post-RIE cleaning processes after the dry gate recess etching step of lattice-matched InGaAs/InAlAs/InP-HEMTs using an oxygen plasma treatment of the surface followed by various wet chemical steps have been investigated. The treated surfaces have been analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). In addition, the electrical characteristics have been assessed by DC and microwave measurements of HEMT devices. A considerable improvement of the surface quality using post-RIE cleaning has been observed, resulting in better electrical device performance.

Original language	English
Pages (from-to)	67-70
Number of pages	4
Journal	Microelectronic Engineering
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(96)00150-5
Publication status	Published - 1 Jan 1997

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abstract = "Post-RIE cleaning processes after the dry gate recess etching step of lattice-matched InGaAs/InAlAs/InP-HEMTs using an oxygen plasma treatment of the surface followed by various wet chemical steps have been investigated. The treated surfaces have been analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). In addition, the electrical characteristics have been assessed by DC and microwave measurements of HEMT devices. A considerable improvement of the surface quality using post-RIE cleaning has been observed, resulting in better electrical device performance.",

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T1 - An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs

AU - Duran, H. C.

AU - Cheung, R.

AU - Patrick, W.

AU - Bächtold, W.

AU - Pfund, I.

AU - Hähner, G.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Post-RIE cleaning processes after the dry gate recess etching step of lattice-matched InGaAs/InAlAs/InP-HEMTs using an oxygen plasma treatment of the surface followed by various wet chemical steps have been investigated. The treated surfaces have been analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). In addition, the electrical characteristics have been assessed by DC and microwave measurements of HEMT devices. A considerable improvement of the surface quality using post-RIE cleaning has been observed, resulting in better electrical device performance.

AB - Post-RIE cleaning processes after the dry gate recess etching step of lattice-matched InGaAs/InAlAs/InP-HEMTs using an oxygen plasma treatment of the surface followed by various wet chemical steps have been investigated. The treated surfaces have been analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). In addition, the electrical characteristics have been assessed by DC and microwave measurements of HEMT devices. A considerable improvement of the surface quality using post-RIE cleaning has been observed, resulting in better electrical device performance.

UR - https://www.scopus.com/pages/publications/0031074105

U2 - 10.1016/S0167-9317(96)00150-5

DO - 10.1016/S0167-9317(96)00150-5

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VL - 35

SP - 67

EP - 70

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs

Abstract

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