An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs

H. C. Duran*, R. Cheung, W. Patrick, W. Bächtold, I. Pfund, G. Hähner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Post-RIE cleaning processes after the dry gate recess etching step of lattice-matched InGaAs/InAlAs/InP-HEMTs using an oxygen plasma treatment of the surface followed by various wet chemical steps have been investigated. The treated surfaces have been analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). In addition, the electrical characteristics have been assessed by DC and microwave measurements of HEMT devices. A considerable improvement of the surface quality using post-RIE cleaning has been observed, resulting in better electrical device performance.

Original languageEnglish
Pages (from-to)67-70
Number of pages4
JournalMicroelectronic Engineering
Volume35
Issue number1-4
DOIs
Publication statusPublished - 1 Jan 1997

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