Alternative explanation for the origin of the resistivity anomaly in La-doped BaTiO3

F. D. Morrison; D. C. Sinclair; A. R. West

Alternative explanation for the origin of the resistivity anomaly in La-doped BaTiO3

F. D. Morrison, D. C. Sinclair, A. R. West

Research output: Contribution to journal › Article › peer-review

Abstract

Semiconductivity in La-doped BaTiO3 ceramics after high-temperature firing, e.g., 1350 degreesC in air, is attributed to oxygen nonstoichiometry. In more heavily doped compositions, the observed resistivity rise is attributed to surface oxidation of the grains during cooling.

Original language	English
Pages (from-to)	474-476
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	84
Issue number	2
Publication status	Published - 2001

Cite this

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title = "Alternative explanation for the origin of the resistivity anomaly in La-doped BaTiO3",

abstract = "Semiconductivity in La-doped BaTiO3 ceramics after high-temperature firing, e.g., 1350 degreesC in air, is attributed to oxygen nonstoichiometry. In more heavily doped compositions, the observed resistivity rise is attributed to surface oxidation of the grains during cooling.",

author = "Morrison, {F. D.} and Sinclair, {D. C.} and West, {A. R.}",

year = "2001",

language = "English",

volume = "84",

pages = "474--476",

journal = "Journal of the American Ceramic Society",

issn = "1551-2916",

publisher = "Wiley-Blackwell",

number = "2",

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TY - JOUR

T1 - Alternative explanation for the origin of the resistivity anomaly in La-doped BaTiO3

AU - Morrison, F. D.

AU - Sinclair, D. C.

AU - West, A. R.

PY - 2001

Y1 - 2001

N2 - Semiconductivity in La-doped BaTiO3 ceramics after high-temperature firing, e.g., 1350 degreesC in air, is attributed to oxygen nonstoichiometry. In more heavily doped compositions, the observed resistivity rise is attributed to surface oxidation of the grains during cooling.

AB - Semiconductivity in La-doped BaTiO3 ceramics after high-temperature firing, e.g., 1350 degreesC in air, is attributed to oxygen nonstoichiometry. In more heavily doped compositions, the observed resistivity rise is attributed to surface oxidation of the grains during cooling.

M3 - Article

SN - 1551-2916

VL - 84

SP - 474

EP - 476

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 2

ER -

Alternative explanation for the origin of the resistivity anomaly in La-doped BaTiO3

Abstract

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