Allyl-iso-propyltelluride, a new MOVPE precursor for CdTe, HgTe and (Hg,Cd)Te

JE Hails, David John Cole-Hamilton, J Stevenson, W Bell

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The use of allyl-iso-propyltelluride as the tellurium precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal organic vapour-phase epitaxy has been investigated. It has proved to be an efficient source of tellurium with growth rates for HgTe and (Ng,Cd)Te of up to 10 mu m h(-1) at 300 degrees C. The best CdTe was grown at 4.5 mu m h(-1) under Me,Cd-rich conditions at 300 degrees C in the presence of Hg vapour. Crown Copyright (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)45-49
Number of pages5
JournalJournal of Crystal Growth
Volume214/215
Publication statusPublished - Jun 2000

Keywords

  • MOVPE
  • tellurium precursor
  • cadmium telluride
  • mercury telluride
  • cadmium mercury telluride
  • mercury cadmium telluride
  • THIN-FILMS
  • GROWTH
  • MOCVD

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