Abstract
The use of allyl-iso-propyltelluride as the tellurium precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal organic vapour-phase epitaxy has been investigated. It has proved to be an efficient source of tellurium with growth rates for HgTe and (Ng,Cd)Te of up to 10 mu m h(-1) at 300 degrees C. The best CdTe was grown at 4.5 mu m h(-1) under Me,Cd-rich conditions at 300 degrees C in the presence of Hg vapour. Crown Copyright (C) 2000 Published by Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 45-49 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 214/215 |
| Publication status | Published - Jun 2000 |
Keywords
- MOVPE
- tellurium precursor
- cadmium telluride
- mercury telluride
- cadmium mercury telluride
- mercury cadmium telluride
- THIN-FILMS
- GROWTH
- MOCVD