AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation

C. Schneider; S. Kremling; N. V. Tarakina; T. Braun; M. Adams; M. Lermer; S. Reitzenstein; L. Worschech; M. Kamp; Sven Höfling; A. Forchel

doi:10.1088/0268-1242/27/3/032002

AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation

C. Schneider^*, S. Kremling, N. V. Tarakina, T. Braun, M. Adams, M. Lermer, S. Reitzenstein, L. Worschech, M. Kamp, Sven Höfling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the realization of quantum dot (QD) solar cells comprising a spectrally large absorption range. The QD absorption band is designed by integrating quaternary AlGaInAs QDs with varying aluminum contents in combination with conventional InAs/GaAs QDs in the intrinsic region of an AlGaAs p-i-n structure. By adjusting the material composition in the different QD layers, we can cover a spectral range from 680 to 1150 nm by QD absorption. Based on our results we discuss a newly proposed solar cell design employable to facilitate intermediate band absorption for an increased efficiency.

Original language	English
Article number	032002
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	27
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/27/3/032002
Publication status	Published - Mar 2012

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title = "AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation",

abstract = "We report on the realization of quantum dot (QD) solar cells comprising a spectrally large absorption range. The QD absorption band is designed by integrating quaternary AlGaInAs QDs with varying aluminum contents in combination with conventional InAs/GaAs QDs in the intrinsic region of an AlGaAs p-i-n structure. By adjusting the material composition in the different QD layers, we can cover a spectral range from 680 to 1150 nm by QD absorption. Based on our results we discuss a newly proposed solar cell design employable to facilitate intermediate band absorption for an increased efficiency.",

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T1 - AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation

AU - Schneider, C.

AU - Kremling, S.

AU - Tarakina, N. V.

AU - Braun, T.

AU - Adams, M.

AU - Lermer, M.

AU - Reitzenstein, S.

AU - Worschech, L.

AU - Kamp, M.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2012/3

Y1 - 2012/3

N2 - We report on the realization of quantum dot (QD) solar cells comprising a spectrally large absorption range. The QD absorption band is designed by integrating quaternary AlGaInAs QDs with varying aluminum contents in combination with conventional InAs/GaAs QDs in the intrinsic region of an AlGaAs p-i-n structure. By adjusting the material composition in the different QD layers, we can cover a spectral range from 680 to 1150 nm by QD absorption. Based on our results we discuss a newly proposed solar cell design employable to facilitate intermediate band absorption for an increased efficiency.

AB - We report on the realization of quantum dot (QD) solar cells comprising a spectrally large absorption range. The QD absorption band is designed by integrating quaternary AlGaInAs QDs with varying aluminum contents in combination with conventional InAs/GaAs QDs in the intrinsic region of an AlGaAs p-i-n structure. By adjusting the material composition in the different QD layers, we can cover a spectral range from 680 to 1150 nm by QD absorption. Based on our results we discuss a newly proposed solar cell design employable to facilitate intermediate band absorption for an increased efficiency.

KW - RECOMBINATION

U2 - 10.1088/0268-1242/27/3/032002

DO - 10.1088/0268-1242/27/3/032002

M3 - Article

SN - 0268-1242

VL - 27

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

M1 - 032002

ER -

AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation

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