AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation

C. Schneider*, S. Kremling, N. V. Tarakina, T. Braun, M. Adams, M. Lermer, S. Reitzenstein, L. Worschech, M. Kamp, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We report on the realization of quantum dot (QD) solar cells comprising a spectrally large absorption range. The QD absorption band is designed by integrating quaternary AlGaInAs QDs with varying aluminum contents in combination with conventional InAs/GaAs QDs in the intrinsic region of an AlGaAs p-i-n structure. By adjusting the material composition in the different QD layers, we can cover a spectral range from 680 to 1150 nm by QD absorption. Based on our results we discuss a newly proposed solar cell design employable to facilitate intermediate band absorption for an increased efficiency.

Original languageEnglish
Article number032002
Number of pages5
JournalSemiconductor Science and Technology
Volume27
Issue number3
DOIs
Publication statusPublished - Mar 2012

Keywords

  • RECOMBINATION

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