AlAs/GaAs micropillar cavities with quality factors exceeding 150.000

S. Reitzenstein*, C. Hofmann, A. Gorbunov, M. Gorbunov, M. Strauss, S. H. Kwon, C. Schneider, A. Loeffler, Sven Höfling, M. Kamp, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

263 Citations (Scopus)

Abstract

The authors report on AlAs/ GaAs micropillar cavities with unprecedented quality factors based on high reflectivity distributed Bragg reflectors (DBRs). Due to an increased number of mirror pairs in the DBRs and an optimized etching process record quality (Q) factors up to 165.000 are observed for micropillars with diameters of 4 mu m. Optical studies reveal a very small ellipticity of 5 X 10(-4) of the pillar cross section. Because of the high Q factors, strong coupling with a vacuum Rabi splitting of 23 mu eV is observed for micropillars with a diameter of 3 mu m. (c) 2007 American Institute of Physics.

Original languageEnglish
Article number251109
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number25
DOIs
Publication statusPublished - 18 Jun 2007

Keywords

  • SEMICONDUCTOR QUANTUM DOTS

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