AlAs/GaAs micropillar cavities with quality factors exceeding 150.000

S. Reitzenstein*, C. Hofmann, A. Gorbunov, M. Gorbunov, M. Strauss, S. H. Kwon, C. Schneider, A. Loeffler, Sven Höfling, M. Kamp, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

263 Citations (Scopus)


The authors report on AlAs/ GaAs micropillar cavities with unprecedented quality factors based on high reflectivity distributed Bragg reflectors (DBRs). Due to an increased number of mirror pairs in the DBRs and an optimized etching process record quality (Q) factors up to 165.000 are observed for micropillars with diameters of 4 mu m. Optical studies reveal a very small ellipticity of 5 X 10(-4) of the pillar cross section. Because of the high Q factors, strong coupling with a vacuum Rabi splitting of 23 mu eV is observed for micropillars with a diameter of 3 mu m. (c) 2007 American Institute of Physics.

Original languageEnglish
Article number251109
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 18 Jun 2007




Dive into the research topics of 'AlAs/GaAs micropillar cavities with quality factors exceeding 150.000'. Together they form a unique fingerprint.

Cite this