Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

Planar metal-insulator-metal (MIM) mono-dielectric layer stacks were fabricated using pulsed laser deposited thin films of high-k dielectric LaGdO3. These stacks showed high capacitance density similar to 43.5 fF/mu m(2) with sub-nanometer capacitance equivalent thicknesses of similar to 0.66 nm, large breakdown field of similar to 6 MV/cm, greater energy storage density of similar to 40 J/cm(3), smaller voltage coefficient of capacitance, and lower dependence of it on layer thickness alpha proportional to d(-1) and frequency. All these features make LaGdO3 a material of interest for next generation MIM structures for radio frequency, analog/mixed-signal, and dynamic random access memory applications. (C) 2013 AIP Publishing LLC.