Adjusting the conductivity of GaInNAs solar cells from p- to n-type with the As/III ratio

Fabian Langer; Svenja Perl; Sven Hoefling; Martin Kamp

doi:10.1109/PVSC.2015.7356345

Adjusting the conductivity of GaInNAs solar cells from p- to n-type with the As/III ratio

Fabian Langer, Svenja Perl, Sven Hoefling, Martin Kamp

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we report on the growth of p-i-n dilute nitride solar cells with highly compensated GaInNAs (1.0 eV bandgap) layers. We obtained internal quantum efficiencies (IQE) up to 85 % at 0.2 eV above the bandgap. The compensation doping was achieved by the formation of n-type defects during the GaInNAs growth. We were able to fine tune the concentration of the n-type defects by the As/III ratio in a range wide enough to continuously adjust the GaInNAs layer from p-type to n-type. However, the high IQE comes along with an increased dark current density, resulting in a decreased open circuit voltage (VOC) of about 0.2 V.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356345
Publication status	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Keywords

1.0 eV
Conductivity
Electrically active defects
GaInNAs solar cells

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10.1109/PVSC.2015.7356345

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@inproceedings{8554fdc7beb6416d95d047686f3c2021,

title = "Adjusting the conductivity of GaInNAs solar cells from p- to n-type with the As/III ratio",

abstract = "In this work, we report on the growth of p-i-n dilute nitride solar cells with highly compensated GaInNAs (1.0 eV bandgap) layers. We obtained internal quantum efficiencies (IQE) up to 85 \% at 0.2 eV above the bandgap. The compensation doping was achieved by the formation of n-type defects during the GaInNAs growth. We were able to fine tune the concentration of the n-type defects by the As/III ratio in a range wide enough to continuously adjust the GaInNAs layer from p-type to n-type. However, the high IQE comes along with an increased dark current density, resulting in a decreased open circuit voltage (VOC) of about 0.2 V.",

keywords = "1.0 eV, Conductivity, Electrically active defects, GaInNAs solar cells",

author = "Fabian Langer and Svenja Perl and Sven Hoefling and Martin Kamp",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356345",

language = "English",

isbn = "9781479979448",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

}

Langer, F, Perl, S, Hoefling, S & Kamp, M 2015, Adjusting the conductivity of GaInNAs solar cells from p- to n-type with the As/III ratio. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356345, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7356345

TY - GEN

T1 - Adjusting the conductivity of GaInNAs solar cells from p- to n-type with the As/III ratio

AU - Langer, Fabian

AU - Perl, Svenja

AU - Hoefling, Sven

AU - Kamp, Martin

PY - 2015/12/14

Y1 - 2015/12/14

N2 - In this work, we report on the growth of p-i-n dilute nitride solar cells with highly compensated GaInNAs (1.0 eV bandgap) layers. We obtained internal quantum efficiencies (IQE) up to 85 % at 0.2 eV above the bandgap. The compensation doping was achieved by the formation of n-type defects during the GaInNAs growth. We were able to fine tune the concentration of the n-type defects by the As/III ratio in a range wide enough to continuously adjust the GaInNAs layer from p-type to n-type. However, the high IQE comes along with an increased dark current density, resulting in a decreased open circuit voltage (VOC) of about 0.2 V.

AB - In this work, we report on the growth of p-i-n dilute nitride solar cells with highly compensated GaInNAs (1.0 eV bandgap) layers. We obtained internal quantum efficiencies (IQE) up to 85 % at 0.2 eV above the bandgap. The compensation doping was achieved by the formation of n-type defects during the GaInNAs growth. We were able to fine tune the concentration of the n-type defects by the As/III ratio in a range wide enough to continuously adjust the GaInNAs layer from p-type to n-type. However, the high IQE comes along with an increased dark current density, resulting in a decreased open circuit voltage (VOC) of about 0.2 V.

KW - 1.0 eV

KW - Conductivity

KW - Electrically active defects

KW - GaInNAs solar cells

UR - https://www.scopus.com/pages/publications/84961615170

U2 - 10.1109/PVSC.2015.7356345

DO - 10.1109/PVSC.2015.7356345

M3 - Conference contribution

AN - SCOPUS:84961615170

SN - 9781479979448

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Adjusting the conductivity of GaInNAs solar cells from p- to n-type with the As/III ratio

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