Adjusting the conductivity of GaInNAs solar cells from p- to n-type with the As/III ratio

Fabian Langer, Svenja Perl, Sven Hoefling, Martin Kamp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we report on the growth of p-i-n dilute nitride solar cells with highly compensated GaInNAs (1.0 eV bandgap) layers. We obtained internal quantum efficiencies (IQE) up to 85 % at 0.2 eV above the bandgap. The compensation doping was achieved by the formation of n-type defects during the GaInNAs growth. We were able to fine tune the concentration of the n-type defects by the As/III ratio in a range wide enough to continuously adjust the GaInNAs layer from p-type to n-type. However, the high IQE comes along with an increased dark current density, resulting in a decreased open circuit voltage (VOC) of about 0.2 V.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
Publication statusPublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period14/06/1519/06/15

Keywords

  • 1.0 eV
  • Conductivity
  • Electrically active defects
  • GaInNAs solar cells

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