Abstract
In this work, we report on the growth of p-i-n dilute nitride solar cells with highly compensated GaInNAs (1.0 eV bandgap) layers. We obtained internal quantum efficiencies (IQE) up to 85 % at 0.2 eV above the bandgap. The compensation doping was achieved by the formation of n-type defects during the GaInNAs growth. We were able to fine tune the concentration of the n-type defects by the As/III ratio in a range wide enough to continuously adjust the GaInNAs layer from p-type to n-type. However, the high IQE comes along with an increased dark current density, resulting in a decreased open circuit voltage (VOC) of about 0.2 V.
Original language | English |
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Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781479979448 |
DOIs | |
Publication status | Published - 14 Dec 2015 |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country/Territory | United States |
City | New Orleans |
Period | 14/06/15 → 19/06/15 |
Keywords
- 1.0 eV
- Conductivity
- Electrically active defects
- GaInNAs solar cells