Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

M. Motyka*, F. Janiak, K. Ryczko, G. Sek, J. Misiewicz, A. Bauer, R. Weih, Sven Höfling, M. Kamp, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap 'W'-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3-4 mu m for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

Original languageEnglish
Pages (from-to)137-139
Number of pages3
JournalOpto-Electronics review
Volume19
Issue number2
DOIs
Publication statusPublished - Jun 2011

Keywords

  • Fourier-transformed photoreflectance
  • type II quantum well
  • mid-infrared
  • resonant states
  • TRANSITIONS
  • LASERS

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