Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

M. Motyka; F. Janiak; K. Ryczko; G. Sek; J. Misiewicz; A. Bauer; R. Weih; Sven Höfling; M. Kamp; A. Forchel

doi:10.2478/s11772-011-0016-4

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

M. Motyka^*, F. Janiak, K. Ryczko, G. Sek, J. Misiewicz, A. Bauer, R. Weih, Sven Höfling, M. Kamp, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap 'W'-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3-4 mu m for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

Original language	English
Pages (from-to)	137-139
Number of pages	3
Journal	Opto-Electronics review
Volume	19
Issue number	2
DOIs	https://doi.org/10.2478/s11772-011-0016-4
Publication status	Published - Jun 2011

Keywords

Fourier-transformed photoreflectance
type II quantum well
mid-infrared
resonant states
TRANSITIONS
LASERS

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10.2478/s11772-011-0016-4

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title = "Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity",

abstract = "Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap 'W'-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3-4 mu m for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.",

keywords = "Fourier-transformed photoreflectance, type II quantum well, mid-infrared, resonant states, TRANSITIONS, LASERS",

author = "M. Motyka and F. Janiak and K. Ryczko and G. Sek and J. Misiewicz and A. Bauer and R. Weih and Sven H{\"o}fling and M. Kamp and A. Forchel",

year = "2011",

month = jun,

doi = "10.2478/s11772-011-0016-4",

language = "English",

volume = "19",

pages = "137--139",

journal = "Opto-Electronics review",

issn = "1230-3402",

publisher = "Versita",

number = "2",

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TY - JOUR

T1 - Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

AU - Motyka, M.

AU - Janiak, F.

AU - Ryczko, K.

AU - Sek, G.

AU - Misiewicz, J.

AU - Bauer, A.

AU - Weih, R.

AU - Höfling, Sven

AU - Kamp, M.

AU - Forchel, A.

PY - 2011/6

Y1 - 2011/6

N2 - Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap 'W'-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3-4 mu m for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

AB - Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap 'W'-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3-4 mu m for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

KW - Fourier-transformed photoreflectance

KW - type II quantum well

KW - mid-infrared

KW - resonant states

KW - TRANSITIONS

KW - LASERS

U2 - 10.2478/s11772-011-0016-4

DO - 10.2478/s11772-011-0016-4

M3 - Article

SN - 1230-3402

VL - 19

SP - 137

EP - 139

JO - Opto-Electronics review

JF - Opto-Electronics review

IS - 2

ER -

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

Abstract

Keywords

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