Abstract
A solid state electrochemical cell is presented which is capable of generating a beam of potassium vapour. The cell has been used to dope ZnSe with potassium thus forming a p-type semiconductor, during growth of the chalcogenide by molecular beam epitaxy (MBE). The preparation of p-type II-VI compounds, when combined with the n-type material, allows the fabrication of blue LED(s) and lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 15 |
| Number of pages | 5 |
| Journal | Solid State Ionics |
| Volume | 57 |
| Issue number | 1-2 |
| Publication status | Published - Sept 1992 |
Keywords
- MOLECULAR-BEAM EPITAXY
- GROWTH
- ZNSE
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