A NOVEL ELECTROCHEMICAL SOURCE OF POTASSIUM FOR DOPING II-VI COMPOUNDS

P G BRUCE, I ABRAHAMS, K A PRIOR, H STEWART

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2 Citations (Scopus)

Abstract

A solid state electrochemical cell is presented which is capable of generating a beam of potassium vapour. The cell has been used to dope ZnSe with potassium thus forming a p-type semiconductor, during growth of the chalcogenide by molecular beam epitaxy (MBE). The preparation of p-type II-VI compounds, when combined with the n-type material, allows the fabrication of blue LED(s) and lasers.

Original languageEnglish
Pages (from-to)15
Number of pages5
JournalSolid State Ionics
Volume57
Issue number1-2
Publication statusPublished - Sept 1992

Keywords

  • MOLECULAR-BEAM EPITAXY
  • GROWTH
  • ZNSE

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