A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

Vasilij Baumann; Reinhold Rödel; Matthias Heidemann; Christian Schneider; Martin Kamp; Sven Höfling

doi:10.1002/pssa.201431348

A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

Vasilij Baumann, Reinhold Rödel, Matthias Heidemann, Christian Schneider, Martin Kamp, Sven Höfling

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the structural and optical properties of self-assembled (Al,Ga)InP quantum dots (QDs) with varying material composition embedded in a (Al_0.30Ga_0.70)_0.51In_0.49P matrix. The samples were grown by gas-source molecular beam epitaxy. Atomic force microscopy was used to study the structural properties of the quantum dots, revealing a strong dependence of the morphology on the material composition. Low-temperature ensemble photoluminescence was observed between 590 nm and 720 nm. Temperature and excitation power dependent, as well as time resolved measurements were performed, indicating a significantly reduced electron confinement and a reduced overlap of the electron/hole wavefunctions for Al- and/or Ga-rich compositions.

Original language	English
Pages (from-to)	2601-2610
Number of pages	10
Journal	Physica Status Solidi. A
Volume	211
Issue number	11
Early online date	6 Aug 2014
DOIs	https://doi.org/10.1002/pssa.201431348
Publication status	Published - Nov 2014

Keywords

AlGaInP
Molecular beam epitaxy
Quantum dots
Self-assembly

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@article{24abe490854e4096ae14f79b0aeddcf1,

title = "A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy",

abstract = "We report on the structural and optical properties of self-assembled (Al,Ga)InP quantum dots (QDs) with varying material composition embedded in a (Al0.30Ga0.70)0.51In0.49P matrix. The samples were grown by gas-source molecular beam epitaxy. Atomic force microscopy was used to study the structural properties of the quantum dots, revealing a strong dependence of the morphology on the material composition. Low-temperature ensemble photoluminescence was observed between 590 nm and 720 nm. Temperature and excitation power dependent, as well as time resolved measurements were performed, indicating a significantly reduced electron confinement and a reduced overlap of the electron/hole wavefunctions for Al- and/or Ga-rich compositions.",

keywords = "AlGaInP, Molecular beam epitaxy, Quantum dots, Self-assembly",

author = "Vasilij Baumann and Reinhold R{\"o}del and Matthias Heidemann and Christian Schneider and Martin Kamp and Sven H{\"o}fling",

note = "Support of this work by the State of Bavaria is gratefully acknowledged.",

year = "2014",

month = nov,

doi = "10.1002/pssa.201431348",

language = "English",

volume = "211",

pages = "2601--2610",

journal = "Physica Status Solidi. A",

issn = "1862-6319",

publisher = "Wiley-Blackwell",

number = "11",

}

TY - JOUR

T1 - A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

AU - Baumann, Vasilij

AU - Rödel, Reinhold

AU - Heidemann, Matthias

AU - Schneider, Christian

AU - Kamp, Martin

AU - Höfling, Sven

N1 - Support of this work by the State of Bavaria is gratefully acknowledged.

PY - 2014/11

Y1 - 2014/11

N2 - We report on the structural and optical properties of self-assembled (Al,Ga)InP quantum dots (QDs) with varying material composition embedded in a (Al0.30Ga0.70)0.51In0.49P matrix. The samples were grown by gas-source molecular beam epitaxy. Atomic force microscopy was used to study the structural properties of the quantum dots, revealing a strong dependence of the morphology on the material composition. Low-temperature ensemble photoluminescence was observed between 590 nm and 720 nm. Temperature and excitation power dependent, as well as time resolved measurements were performed, indicating a significantly reduced electron confinement and a reduced overlap of the electron/hole wavefunctions for Al- and/or Ga-rich compositions.

AB - We report on the structural and optical properties of self-assembled (Al,Ga)InP quantum dots (QDs) with varying material composition embedded in a (Al0.30Ga0.70)0.51In0.49P matrix. The samples were grown by gas-source molecular beam epitaxy. Atomic force microscopy was used to study the structural properties of the quantum dots, revealing a strong dependence of the morphology on the material composition. Low-temperature ensemble photoluminescence was observed between 590 nm and 720 nm. Temperature and excitation power dependent, as well as time resolved measurements were performed, indicating a significantly reduced electron confinement and a reduced overlap of the electron/hole wavefunctions for Al- and/or Ga-rich compositions.

KW - AlGaInP

KW - Molecular beam epitaxy

KW - Quantum dots

KW - Self-assembly

U2 - 10.1002/pssa.201431348

DO - 10.1002/pssa.201431348

M3 - Article

SN - 1862-6319

VL - 211

SP - 2601

EP - 2610

JO - Physica Status Solidi. A

JF - Physica Status Solidi. A

IS - 11

ER -

A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

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Keywords

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